Grounded Through Insulating Vias for Corrosion-Safe Die Stacking
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Solution Overview
Problem
Integration of multiple semiconductor devices in wafer-level packaging poses challenges due to issues such as electron accumulation leading to corrosion, particularly in the exposure of through semiconductor vias and through insulating vias during the thinning process.
Innovation Solution
The use of electrically grounded through insulating vias (TIVs) that create a path to deplete accumulated electrons, combined with hybrid bonding processes and encapsulant materials to manage electron accumulation and corrosion, allows for the integration of multiple dies in a single package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through insulating vias are exposed during the thinning process, then electrical connection is established, but electron accumulation causes corrosion
Solution Approach 1:
The patent converts the harmful electron accumulation effect into a beneficial grounding function. By intentionally exposing through insulating vias that are electrically connected to ground, the accumulated electrons are drained to ground potential, transforming the corrosion-causing electron accumulation into a useful electron dissipation pathway that protects the device
Solution Approach 2:
The through insulating vias serve as an intermediary element between the exposed semiconductor regions and ground. These vias act as a mediator that provides a controlled electrical pathway to ground, enabling safe dissipation of accumulated electrons while maintaining the insulating function where needed
2Productivity
If multiple dies are integrated in wafer-level packaging, then manufacturing efficiency is improved, but process complexity increases
Solution Approach 1:
The patent divides the wafer into multiple die regions, each capable of independent processing and packaging. This segmentation allows parallel processing of multiple dies while maintaining standardized procedures for each unit, thereby increasing overall manufacturing efficiency without proportionally increasing the complexity of individual die handling
Solution Approach 2:
The patent employs universal through insulating via structures that serve multiple functions: providing electrical grounding, enabling electron dissipation, and serving as alignment references. This multi-functionality reduces the number of separate components and processes needed, thereby managing complexity while achieving multiple objectives
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively resolves the issue of electron accumulation-induced corrosion, enabling the successful integration and packaging of multiple semiconductor devices with improved reliability and reduced manufacturing costs.
Implementation Method 1
The first TIVs are electrically grounded through the contact vias... create a path to deplete accumulated electrons
Data Source
AI summary
A manufacturing method of a package includes at least the following steps. Contact vias are embedded in a semiconductor carrier. The contact vias are electrically grounded. A first die and a first encapsulant are provided over the semiconductor carrier. The first encapsulant encapsulates the first die. First through insulating vias (TIV) are formed aside the first die. The first TIVs are electrically grounded through the contact vias. The first die, the first encapsulant, and the first TIVs are grinded. A second die is stacked over the first die.