Grounded TSV Impurity Ring Structure for Electrical Noise Reduction
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Solution Overview
Problem
Existing semiconductor devices with through silicon vias (TSVs) generate electrical noise that adversely affect device performance and reliability in 3D packages, necessitating the development of a TSV design that reduces such noise.
Innovation Solution
A semiconductor device design incorporating a substrate with impurity areas surrounding a via structure, connected to a first and second wiring layer, with a ground connection, to mitigate electrical noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through silicon via (TSV) is formed for vertical electrical connection in a 3D package, then electrical connection between stacked semiconductor elements is improved, but electrical noise is generated that adversely affects device performance and reliability
Solution Approach 1:
An intermediary structure (the ring-shaped impurity area surrounded by a second impurity area) is introduced between the TSV and the surrounding environment. This intermediary acts as a noise barrier that intercepts and dissipates electrical noise before it can propagate to adjacent circuit elements, thereby reducing harmful electromagnetic interference while preserving the TSV's electrical connection function
Solution Approach 2:
The invention converts the potentially harmful electrical noise generated by the TSV into a beneficial shielding effect. By forming conductive impurity areas in a specific pattern around the TSV, the noise energy is redirected and contained within the impurity region, where it is dissipated harmlessly, thus transforming the TSV from a noise source into a structure that actively manages its own electromagnetic interference
2Reliability
If impurity areas and ground connections are added to reduce electrical noise, then reliability is improved, but device complexity increases
Solution Approach 1:
The invention merges multiple functions into the impurity areas: they serve as both electrical noise shielding structures and as integral parts of the semiconductor device fabrication process. The impurity areas are formed using standard ion implantation techniques already present in manufacturing flows, combining noise reduction functionality with existing process steps rather than adding separate complex structures
Solution Approach 2:
The impurity areas are strategically positioned only where needed - in a ring pattern surrounding the TSV - rather than uniformly across the entire device. This localized approach provides noise shielding precisely at the TSV interface where electromagnetic interference is most severe, while minimizing the overall amount of additional material and process complexity required
Data Source
AI summary
A semiconductor device includes a substrate, a first impurity area in the substrate, a via structure extending in a first direction and into the first impurity area, a second impurity area that surrounds at least a portion of the via structure, a first contact that is on the second impurity area and electrically connected to the second impurity area, a first wiring layer that is on the first contact and electrically connected to the first contact, and a second wiring layer that is on the first wiring layer and electrically connected to a ground.