Group III Nitride Semiconductor Layer Bonded Substrate
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Solution Overview
Problem
The high manufacturing cost and low crystallinity of group III nitride semiconductor substrates, which are due to the slow crystal growth and mechanical weakness of thin substrates, necessitate a method to enhance the crystallinity and mechanical strength of bonded substrates.
Innovation Solution
A method involving ion implantation of hydrogen or helium in a specific depth range on a group III nitride semiconductor substrate, followed by bonding with a different-composition substrate, separating at the implanted region, and annealing in a nitrogen-containing gas at temperatures above 700°C to recover crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If ion implantation is performed to enable substrate separation, then substrate separation is achieved, but implanted ions pass through and are present in the thin nitride semiconductor layer, lowering crystallinity
Solution Approach 1:
The patent applies preliminary action by performing ion implantation at a controlled depth before substrate separation. The ion implantation depth is specifically set to create a separation layer while preventing ions from reaching the thin nitride semiconductor layer that will remain after separation. This preliminary positioning of ions ensures that when separation occurs, the harmful ions are left in the discarded substrate portion rather than contaminating the valuable semiconductor layer.
Solution Approach 2:
The patent applies the extraction principle by selectively removing the ion-implanted region from the final semiconductor structure. Through controlled separation at the ion-implanted depth, the portion of the substrate containing the implanted ions is extracted and discarded, while the thin nitride semiconductor layer without ion contamination is retained and bonded to a new substrate. This extraction eliminates the harmful effect of implanted ions on crystallinity.
2Productivity
If thin group III nitride semiconductor layers are cut to increase substrate quantity, then the number of substrates increases, but mechanical strength is lowered and substrates cannot be free-standing
Solution Approach 1:
The patent applies the intermediary principle by introducing a different-composition substrate as a mechanical support for the thin nitride semiconductor layer. After separating the thin layer from the original substrate at the ion-implanted depth, the layer is bonded to a new substrate with different chemical composition. This intermediary substrate provides the necessary mechanical strength and stability, allowing thin layers to be handled and used without requiring excessive thickness for structural integrity.
3Manufacturing precision
If annealing is performed at high temperature to recover crystallinity, then crystallinity is improved, but the process complexity and energy consumption increase
Solution Approach 1:
The patent applies parameter changes by optimizing the annealing temperature to a specific range (700-1100°C) that effectively recovers crystallinity while avoiding excessive process complexity. The ion implantation parameters (depth, dose, energy) are also precisely controlled to enable separation at the optimal location. By carefully setting these parameters, the patent achieves high crystallinity recovery through a straightforward annealing process without requiring complex multi-step treatments or extreme conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a group III nitride semiconductor layer bonded substrate with high crystallinity, as evidenced by a half-width of X-ray diffraction peak below 450 arcsec, and improves the mechanical strength and characteristics of semiconductor devices.
Implementation Method 1
implanting ions of at least any of hydrogen and helium in a region having a prescribed depth from one main surface of a group III nitride semiconductor substrate
Implementation Method 2
annealing the group III nitride semiconductor layer bonded substrate at a temperature not lower than 700° C. in an atmosphere of a nitrogen-containing gas
Data Source
AI summary
The present method of manufacturing a group III nitride semiconductor layer bonded substrate includes the steps of: implanting ions I of at least any of hydrogen and helium in a region having a prescribed depth D from one main surface of a group III nitride semiconductor substrate; bonding a different-composition substrate with the main surface of the group III nitride semiconductor substrate; obtaining a group III nitride semiconductor layer bonded substrate by separating the group III nitride semiconductor substrate at a region implanted with the ions I; and annealing the group III nitride semiconductor layer bonded substrate at a temperature not lower than 700° C. in an atmosphere of a nitrogen-containing gas N. Thus, a group III nitride semiconductor layer bonded substrate high in crystallinity of a group III nitride semiconductor layer is provided.