Group III Nitride Buffer Layer for Dislocation Reduction
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Solution Overview
Problem
Existing methods for manufacturing semiconductor structures based on element III nitrides, such as gallium nitride on substrates, face challenges due to high through-dislocation densities, which increase leakage currents and deteriorate luminescence efficiency in light-emitting devices. Additionally, these methods require empirical optimization of nanoporous silicon nitride layers, making them costly and non-generic.
Innovation Solution
A method involving the deposition of a crystalline layer that covers the entire surface of the buffer layer to prevent oxidation and eliminate the need for empirical optimization of nanoporous layers, allowing for the growth of gallium nitride with reduced dislocation density and enabling the storage of substrates before deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a nanoporous silicon nitride layer is deposited to reduce dislocation density, then through-dislocation density is reduced, but the process requires empirical optimization making it costly and non-generic
Solution Approach 1:
The patent changes the deposition parameters of the silicon nitride layer to achieve a specific porosity range (20-80%) that optimizes dislocation reduction while enabling generic manufacturing. By controlling the porosity parameter within this range, the process becomes more standardized and less dependent on empirical optimization for each specific case.
Solution Approach 2:
The silicon nitride layer acts as an intermediary buffer layer between the substrate and the gallium nitride layer. This intermediate layer with controlled porosity serves as a template that reduces dislocation propagation while providing a standardized interface that simplifies the manufacturing process.
2Ease of manufacture
If conventional epitaxy is used on substrate, then manufacturing is simple, but high through-dislocation density increases leakage currents and deteriorates luminescence efficiency
Solution Approach 1:
A buffer layer comprising a first layer based on element III nitride and a second crystalline layer is introduced as an intermediary structure between the substrate and the active semiconductor layer. This buffer layer structure filters out dislocations while maintaining manufacturing feasibility, thereby improving luminescence efficiency without excessive complexity.
Solution Approach 2:
The buffer layer uses a composite structure combining element III nitride material with a crystalline layer having specific orientation relationships. This composite approach leverages the beneficial properties of both materials to reduce dislocation density while maintaining compatibility with conventional manufacturing processes.
3Reliability
If crystalline layer is deposited to cover entire buffer layer surface, then oxidation is prevented and storage is enabled, but deposition time increases
Solution Approach 1:
The crystalline layer is deposited with specific local crystallographic orientation (e.g., <100> orientation) that provides optimal protection against oxidation. By controlling the local quality and orientation of the crystalline layer, effective protection is achieved with minimal deposition time rather than requiring complete coverage regardless of orientation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces through-dislocation density in gallium nitride layers, enhances luminescence efficiency, and allows for cost-effective, generic manufacturing processes by eliminating the need for empirical optimization of nanoporous layer parameters.
Implementation Method 1
a method involving the deposition of a crystalline layer that covers the entire surface of the buffer layer
Implementation Method 2
a diffraction image of said crystalline layer obtained by diffraction of electrons at grazing incidence
Data Source
Figure 1~2
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Figure 5~6
AI summary
The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of: formation (100) of a buffer layer (20) on a substrate (10), said buffer layer comprising an upper surface layer based on group III nitrides; and deposition (200) of a crystalline layer (30) on the buffer layer, said crystalline layer being deposited from silicon atoms so as to cover the entire surface of the upper layer based on group III nitrides. The invention also relates to a support produced by the method, to a semiconductor structure based on the support, and to the method for the production thereof.