Group III-Nitride CMP Slurry Oxidizer Softening

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Solution Overview

Problem

Chemical mechanical polishing (CMP) of group III-nitride semiconductor materials faces challenges in minimizing surface and sub-surface damage during the polishing process.

Innovation Solution

The use of a CMP slurry composition comprising a liquid carrier, an oxidizer with a transition metal element or per-based compound, and optional particles, which reacts with the group III-nitride surface to form a softened layer, allowing for effective polishing with a soft pad and accelerated oxidation rate, reducing damage and increasing polishing rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional CMP methods are used on group III-nitride surfaces, then polishing can be performed, but surface and sub-surface damage occurs

Engineering Contradiction:

Improvepolishing processabilityVSAvoidsurface and sub-surface damage

Core Design Contradiction:

Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent changes the chemical parameters of the polishing slurry by incorporating oxidizers (such as ammonium persulfate, hydrogen peroxide, or potassium permanganate) that react with group III-nitride materials to form softened surface layers. This chemical modification enables effective polishing while reducing mechanical damage to the substrate surface.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces a chemical intermediary (oxidizer) that mediates between the polishing pad and the group III-nitride surface. The oxidizer creates a softened intermediate layer that is easier to remove mechanically, reducing direct mechanical stress and damage to the underlying substrate.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If polishing rate is increased to improve productivity, then more material is removed, but surface and sub-surface damage increases

Engineering Contradiction:

Improvepolishing rateVSAvoidsurface and sub-surface damage

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent replaces purely mechanical removal with a chemically-assisted process. The oxidizer chemically modifies the surface to form a softened layer that can be removed more easily, reducing the mechanical force required and thereby reducing damage while maintaining high removal rates.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

By changing the chemical composition and reactivity parameters of the slurry (adding oxidizers with different strengths and concentrations), the patent optimizes the balance between material removal rate and surface damage, enabling faster polishing without proportionally increasing damage.

Inventive Principle:

Principle #35Parameter changes

3Productivity

If strong oxidizers are used to increase material removal rate, then polishing efficiency improves, but byproduct deposition on polishing pad increases

Engineering Contradiction:

Improvematerial removal rateVSAvoidpolishing pad contamination

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent optimizes the concentration and type of oxidizer in the slurry to achieve effective material removal while controlling byproduct formation. By adjusting these chemical parameters, the process balances polishing efficiency with pad contamination management.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves high polishing rates with reduced surface and sub-surface damage, utilizing catalytic breakdown and insoluble byproducts to enhance the polishing process, particularly with transition metal or per-based oxidizers and soft particles or pads.

Implementation Method 1

an oxidizer comprising a transition metal element or a per-based compound... that reacts with the Group III-nitride comprising surface to form a softened Group III-nitride comprising surface

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 2

The transition metal or per-based oxidizers break down into insoluble byproducts during the polishing process... can help accelerate catalytic breakdown of the oxidizer during the polishing process

Methodology Applied

Scientific EffectCatalytic breakdown: Catalysis

Data Source

PatentUS8828874B2Chemical mechanical polishing of group III-nitride surfaces

Publication Date: 2014.09.09 ENTEGRIS INC

AI summary

A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.