Group III Nitride Crystal Growth Hexagonal Seed Arrangement
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Solution Overview
Problem
Conventional methods for producing large-sized group III nitride crystals face challenges in minimizing cracking and breaking due to the formation of jagged structures at the outer periphery, which affects the yield and quality of the crystals.
Innovation Solution
A method involving the disposition of group III nitride seed crystals within a hexagonal region on a substrate, where the seed crystals are grown by contacting them with a melt containing group III elements and alkali metals in a nitrogen atmosphere, resulting in a linear outer periphery and reduced likelihood of cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If seed crystals are disposed on a circular region of a disk-like substrate, then large-sized group III nitride crystals can be grown, but jagged structures are formed at the outer periphery which act as origins of breaking or cracks
Solution Approach 1:
The invention segments the substrate surface into multiple hexagonal regions, each capable of independently growing a group III nitride crystal. By dividing the substrate into six hexagonal regions arranged radially, the system achieves both large overall crystal size and reliable individual crystal quality, with each hexagonal region acting as an independent growth zone that prevents jagged structure formation at boundaries
Solution Approach 2:
The invention applies hexagonal geometry (a form of curved/polygonal shape) to the seed crystal arrangement regions instead of circular geometry. The hexagonal shape with its straight edges and corners provides well-defined growth boundaries that prevent the formation of jagged structures, while still enabling large-sized crystal growth through the radial arrangement of multiple hexagons
2Stability of the object's composition
If the outer periphery of the crystal is composed of stable crystal planes, then the crystal structure is stable, but jagged portions are generated in some regions which tend to act as origins of breaking or cracks
Solution Approach 1:
The invention applies different geometric configurations to different regions of the substrate. Each hexagonal region is designed with specific orientation and size characteristics that optimize local crystal growth, ensuring that the outer periphery of each individual crystal maintains stable crystal planes without forming jagged portions, while the overall substrate achieves large crystal size through the combination of multiple such regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of group III nitride crystals with a satisfactory yield and reduced cracking, facilitating the growth of large-sized crystals with a smooth surface, suitable for applications like LEDs and power devices.
Implementation Method 1
growing a group III nitride crystal on each of the seed crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen
Data Source
AI summary
An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.