Group III Nitride Etching for Flatter PEC-Etched Surfaces
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices using Group III nitrides, such as GaN, face challenges in achieving the desired flatness of surfaces formed by photoelectrochemical (PEC) etching, which affects the device characteristics.
Innovation Solution
A method involving two etching steps is employed: a first PEC etching step that forms flat and protruding portions on the surface, followed by a second etching step that selectively lowers the protruding portions, thereby improving the surface flatness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If PEC etching is applied to Group III nitride surface, then etching with less damage is achieved, but surface flatness deteriorates due to formation of protruding portions
Solution Approach 1:
The etching process is segmented into multiple steps: a first PEC etching step that creates initial etching with less damage, followed by a second etching step that specifically targets and removes protruding portions. This segmentation allows each step to optimize for its specific function, resolving the contradiction between damage reduction and flatness maintenance.
Solution Approach 2:
The first PEC etching step performs a preliminary etching action that removes material with minimal damage while intentionally allowing protruding portions to form. This preliminary action sets up the conditions for the second etching step to then flatten the surface by removing these protrusions, thereby achieving both low damage and high flatness.
2Ease of manufacture
If single PEC etching step is used, then process simplicity is maintained, but surface flatness cannot be improved
Solution Approach 1:
The etching process is divided into distinct steps with different objectives: the first step focuses on damage-free etching while the second step focuses on flatness improvement. This segmentation makes the complex task of achieving both low damage and high flatness manageable through sequential, specialized operations.
Solution Approach 2:
The second etching step applies local quality improvement by specifically targeting protruding portions for removal while preserving the already etched flat areas. This localized action on specific surface regions achieves flatness enhancement without unnecessarily complicating the overall process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively enhances the flatness of the surface formed by PEC etching on Group III nitrides, leading to improved semiconductor device characteristics.
Implementation Method 1
Photoelectrochemical (PEC) etching has been proposed as an etching technique for forming various structures on Group III nitrides such as GaN
Implementation Method 2
PEC etching is a wet etching with less damage than general dry etching
Data Source
AI summary
There is provided a method for manufacturing a structure, including:applying a first etching to a surface of a member, at least the surface being composed of Group III nitride; and applying a second etching to the surface to which the first etching has been applied, wherein in applying the first etching, a flat portion and a protruding portion are formed, the flat portion being newly appeared on the surface by etching, and the protruding portion being raised with respect to the flat portion, which is caused by being less likely to be etched than the flat portion, and in applying the second etching, the protruding portion is lowered by etching the protruding portion.