Group III Nitride P-Type Semiconductor Activation via Dual-Stage Heating
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Solution Overview
Problem
Existing techniques for forming group III nitride-based p-type semiconductors using ion implantation are ineffective in activating the p-type semiconductor layer, leading to incomplete activation and inefficiencies in semiconductor device manufacturing.
Innovation Solution
A method involving ion implantation of a p-type impurity into a group III nitride semiconductor layer, followed by a first heating process in an ammonia atmosphere and a second heating process in an oxygen atmosphere, which accelerates the diffusion and fixation of the p-type impurity, enhancing the formation of a group III nitride-based p-type semiconductor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion implantation is used to form p-type semiconductor in group III nitride, then the p-type impurity can be introduced into the semiconductor layer, but the p-type impurity is not effectively activated as p-type semiconductor
Solution Approach 1:
The patent applies parameter changes by implementing a two-stage heating process with different atmospheric conditions and temperature parameters. The first heating process uses ammonia atmosphere at high temperature (900-1400°C) to promote diffusion, while the second heating process uses oxygen-containing atmosphere at lower temperature (500-800°C) to achieve fixation, thereby effectively activating the p-type semiconductor
Solution Approach 2:
The patent implements continuity of useful action by performing sequential heating processes immediately after ion implantation. The first heating process in ammonia atmosphere continues with the second heating process in oxygen atmosphere without interrupting the activation workflow, ensuring continuous transformation of implanted impurities into activated p-type semiconductor
2Ease of manufacture
If single-stage heating is used after ion implantation, then the process is simple, but the p-type impurity diffusion and fixation are insufficient
Solution Approach 1:
The patent applies segmentation by dividing the heating process into two distinct stages: first heating process in ammonia atmosphere for diffusion, and second heating process in oxygen atmosphere for fixation. This segmentation allows each stage to optimize for its specific function, achieving both manufacturing feasibility and precise impurity activation
3Speed
If high temperature heating is used to accelerate diffusion, then diffusion speed increases, but impurity fixation becomes insufficient
Solution Approach 1:
The patent implements periodic action by alternating between two heating conditions: first heating at high temperature in ammonia atmosphere to accelerate diffusion, then second heating at lower temperature in oxygen atmosphere to achieve fixation. This periodic switching of heating parameters ensures both rapid diffusion and reliable impurity fixation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms a group III nitride-based p-type semiconductor by ion implantation, improving the semiconductor's activation and durability, while reducing costs and enhancing manufacturing efficiency.
Implementation Method 1
accelerates diffusion of the p-type impurity into the semiconductor layer in the first heating process
Implementation Method 2
accelerates fixation of the p-type impurity into the semiconductor layer in the second heating process
Implementation Method 3
an ion implantation process of implanting a p-type impurity into a semiconductor layer mainly made of a group III nitride by ion implantation
Data Source
AI summary
The method for manufacturing comprises an ion implantation process of implanting a p-type impurity into a semiconductor layer mainly made of a group III nitride by ion implantation; a first heating process of heating the semiconductor layer at a first temperature in a first atmospheric gas including ammonia (NH3) after the ion implantation process; and a second heating process of heating the semiconductor layer, after the first heating process, at a second temperature that is lower than the first temperature in a second atmospheric gas including oxygen (O2).