Group III Nitride Substrate Manufacturing via Adhesive Bonding
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Solution Overview
Problem
Existing methods for manufacturing group III nitride substrates using seed crystal plates arranged side by side often result in deviations, making high-quality crystal growth difficult, and fixing methods like aluminum oxide jigs do not effectively prevent deviations, leading to incomplete crystal combinations and high defect densities.
Innovation Solution
A method involving the preparation of seed crystal substrates with opposed side surfaces, bonding them to a base material using an adhesive agent, and growing group III nitride crystals on their main surfaces to achieve integral combination and high-quality substrate formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If multiple seed crystal substrates are arranged side by side to form large-diameter substrates, then the substrate diameter is increased, but deviations between substrates occur making high-quality crystal growth difficult
Solution Approach 1:
A clamping structure serves as an intermediary component between multiple seed crystal substrates and the growth chamber. This clamping structure holds the substrates in precise alignment during transport and growth, preventing deviations while enabling the formation of large-diameter substrates through the assembly of multiple smaller seed crystals.
2Stability of the object's composition
If seed crystal substrates are fixed using an aluminum oxide jig to prevent deviation, then positional stability is improved, but crystal growth quality deteriorates
Solution Approach 1:
The invention uses a disposable susceptor that is discarded after a single use. This eliminates the need for complex, reusable fixing jigs like aluminum oxide structures. The susceptor provides adequate positioning during the growth process, and its single-use nature avoids the contamination and quality issues associated with reusable fixtures.
Solution Approach 2:
The invention replaces the mechanical fixing system (aluminum oxide jig) with a thermal field-based approach. The susceptor is designed to work with the thermal gradient in the growth chamber, using thermal conduction and convection to maintain substrate positioning without mechanical constraints that interfere with crystal growth.
3Ease of manufacture
If multiple seed crystal substrates are simply arranged without fixing, then the manufacturing process is simplified, but substrate deviations occur reducing yield
Solution Approach 1:
The clamping structure acts as a simple intermediary that simultaneously achieves both goals: it maintains precise alignment of multiple substrates during transport and growth (improving yield) while adding minimal complexity to the manufacturing process. The structure is designed to be easily installed and removed, preserving process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the easy production of high-quality group III nitride substrates with reduced defects and complete crystal integration, enabling the fabrication of large-diameter substrates with improved yield and reduced off-angle variations.
Implementation Method 1
bonding the plurality of seed crystal substrates on a base material by an adhesive agent
Implementation Method 2
growing a group III nitride crystals above main surfaces of the plurality of seed crystal substrates
Data Source
AI summary
There is provided a method for manufacturing a group III nitride substrate, including: preparing a plurality of seed crystal substrates formed into shapes that can be arranged with side surfaces opposed to each other; bonding the plurality of seed crystal substrates on a base material by an adhesive agent in an appearance that the seed crystal substrates are arranged with the side surfaces opposed to each other; growing a group III nitride crystals above main surfaces of the plurality of seed crystal substrates, so that crystals grown on each main surface are integrally combined each other; and obtaining a group III nitride substrate formed of the group III nitride crystal.