Group III Nitride Test Structure for Surface Profile Evaluation
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Solution Overview
Problem
Current methods for producing Group III nitride semiconductor devices lack effective techniques for evaluating and controlling the surface profiles and features of these devices, which are critical for achieving optimal performance in power electronic applications.
Innovation Solution
A non-contact optical method using an incident light beam with multiple wavelengths to form an optical diffraction grating on the surface of Group III nitride layers, allowing for the detection of reflected spectra and comparison with reference spectra to estimate surface profile parameters, enabling process control and fabrication of accurate semiconductor structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional methods are used for producing Group III nitride semiconductor devices, then manufacturing processes can be completed, but effective evaluation and control of surface profiles and features is lacking
Solution Approach 1:
The patent replaces conventional mechanical or contact-based measurement methods with a non-contact optical measurement system. The system uses light beams to illuminate the semiconductor wafer surface and captures reflected light patterns to evaluate surface profiles and features, eliminating the need for physical contact with the wafer during measurement.
Solution Approach 2:
The patent introduces an optical intermediary system consisting of light sources, optics, and detectors that mediate between the semiconductor wafer and the measurement instrument. This optical intermediary enables indirect measurement of surface characteristics through light reflection patterns, providing evaluation capability without direct mechanical interaction.
2Measurement precision
If non-contact optical measurement is implemented, then surface profile evaluation capability is improved, but device complexity increases
Solution Approach 1:
The patent designs the optical measurement system to perform multiple measurement functions using a unified platform. The same optical system can evaluate various surface features including surface profiles, trench depths, and other geometric characteristics, eliminating the need for multiple specialized measurement instruments and reducing overall system complexity.
Solution Approach 2:
The patent utilizes changes in optical parameters (wavelength, intensity, angle) of reflected light to extract different surface information. By analyzing variations in reflected light patterns corresponding to different surface features, the system achieves comprehensive surface evaluation through parameter analysis rather than requiring multiple physical measurement probes.
3Manufacturing precision
If spectral analysis is used for process control, then manufacturing precision is improved, but measurement and detection difficulty increases
Solution Approach 1:
The patent implements a feedback-based process control system where spectral measurements of surface features are continuously monitored and compared against target values. The system provides feedback information that can be used to adjust manufacturing parameters in real-time, enabling precise control of epitaxial growth and other fabrication processes through iterative optimization.
Solution Approach 2:
The patent performs preliminary spectral measurements and surface evaluations at strategic points during the manufacturing process, such as after epitaxial growth steps. By conducting measurements in advance of final device completion, the system enables early detection of process deviations and allows for corrective actions before defects propagate through subsequent manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method provides precise evaluation and control of surface features, ensuring the quality and performance of Group III nitride semiconductor devices by adjusting processing parameters based on spectral analysis, thereby improving the manufacturing process and device characteristics.
Implementation Method 1
directing an incident light beam having multiple wavelengths at a position of a layer having a surface profile configured to form an optical diffraction grating
Implementation Method 2
detecting a reflected beam, reflected from the position
Data Source
AI summary
In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a Group III nitride, one or more epitaxial Group III nitride layers arranged on the surface and supporting a plurality of transistor devices assembled upon the support substrate, and a test structure formed in a Group III nitride layer. The test structure includes a plurality of trenches configured to provide an optical diffraction grating when illuminated by UV light. The trenches have a parameter corresponding to a parameter of a feature of the transistor devices.