Group IIIa Oxide Ceramic Coating for Plasma Erosion Resistance

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional ceramic coatings used in semiconductor processing vessels are insufficient in resisting plasma erosion and contamination in severe corrosive gas atmospheres, particularly those containing fluorine and hydrocarbon gases, leading to device damage and increased maintenance burdens.

Innovation Solution

A ceramic coating member comprising a substrate with a porous layer of Group IIIb oxide, such as Sc or Y, and a secondary recrystallized layer formed through high energy irradiation, providing enhanced corrosion resistance and reduced particle generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional oxide coatings (Y2O3, etc.) are applied through spray process, then corrosion resistance is improved, but particle formation and plasma erosion resistance are insufficient under severe corrosive gas atmosphere

Engineering Contradiction:

Improvecorrosion resistanceVSAvoidparticle formation

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The invention changes the chemical composition parameters of the coating by incorporating specific elements (Al, Ti, Si, B) in controlled amounts alongside the Group IIIa oxide. This compositional modification transforms the coating properties to achieve both low particle generation and high corrosion resistance under plasma exposure

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite coating material combining Group IIIa oxide (Sc2O3, Y2O3, or La2O3) with multiple other oxides and elements. This composite structure synergistically provides excellent plasma erosion resistance, low particle formation, and high corrosion resistance that single-material coatings cannot achieve

Inventive Principle:

Principle #40Composite materials

2Productivity

If plasma etching is conducted at higher output in severe corrosive atmosphere, then etching efficiency is improved, but coating erosion and device damage increase

Engineering Contradiction:

Improveetching efficiencyVSAvoidplasma erosion

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The coating composition is optimized with specific ratios of Group IIIa oxide (60-95 mass%) combined with other protective elements, creating a material that maintains stability and protective properties even under high-power plasma conditions, enabling efficient etching without excessive erosion

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The coating incorporates elements that form stable oxide layers under plasma conditions, creating a protective barrier that resists erosion from the corrosive plasma environment while allowing the plasma process to proceed at high output

Inventive Principle:

Principle #38Strong oxidants (Accelerated oxidation)

3Productivity

If fluoride compounds are formed through strong corrosion reaction with halogen gas, then gas phase chemistry is enhanced, but particle formation and contamination increase

Engineering Contradiction:

Improvereaction efficiencyVSAvoidcontaminant particles

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The coating material is designed to interact with the corrosive fluoride-containing plasma environment, transforming the harmful corrosive action into a beneficial protective effect where the coating forms stable compounds that prevent particle generation while maintaining reaction efficiency

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The coating significantly improves durability against plasma erosion, minimizes contamination, and enhances etching efficiency, leading to improved semiconductor production and reduced maintenance needs.

Implementation Method 1

a porous layer made of an oxide of an element in Group IIIa of the Periodic Table which is coated on the surface of the substrate

Methodology Applied

Scientific EffectPlasma energy absorption: Absorption (EM radiation)

Implementation Method 2

a secondary recrystallized layer of the oxide which is formed on the porous layer

Methodology Applied

Scientific EffectRecrystallization: Crystallisation

Data Source

PatentUS7648782B2Ceramic coating member for semiconductor processing apparatus

Publication Date: 2010.01.19 TOKYO ELECTRON LTD

AI summary

Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.