Group 4 Metal Precursor for Uniform ALD Film Deposition
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Solution Overview
Problem
There is a need for a novel Group 4 metal element-containing compound that can be used as a precursor to form a uniform film, particularly on substrates with trenches or grooves, which requires high thermal stability and can maintain film uniformity at high temperatures.
Innovation Solution
A Group 4 metal element-containing compound represented by the chemical formula (R1C5H4)MA3, where M is Ti, Zr, or Hf, and R1 is a linear or branched alkyl group with 3 to 5 carbon atoms, is developed, along with methods for preparing and using this compound in film formation processes like atomic layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional Group 4 metal compounds are used for film formation, then film deposition can be achieved, but the film uniformity deteriorates on substrates with deep trenches or grooves
Solution Approach 1:
The patent modifies the molecular structure parameters of Group 4 metal compounds by introducing specific ligand combinations (cyclopentadienyl with alkyl groups combined with amido or alkoxido ligands). This structural parameter change enhances the compound's ability to deposit uniform films on complex substrate geometries including deep trenches, directly resolving the film uniformity issue without requiring process complexity increases.
2Productivity
If high temperature processing is used for film formation, then deposition rate improves, but thermal stability of the precursor compound deteriorates
Solution Approach 1:
The patent creates composite molecular structures combining Group 4 metal centers with specific organic ligand systems (cyclopentadienyl, amido, alkoxido). This composite structure provides both the thermal stability needed for high-temperature processing and the reactivity required for efficient deposition, resolving the contradiction between deposition rate and precursor stability.
Solution Approach 2:
The patent optimizes the thermal stability parameter of precursors by selecting specific ligand combinations with appropriate bond strengths. The cyclopentadienyl ligand provides strong metal bonding for thermal stability, while the amido/alkoxido ligands facilitate controlled decomposition at deposition temperatures, enabling both high deposition rates and precursor stability.
3Manufacturing precision
If existing precursors are used for forming thin films on porous substrates, then deposition is achieved, but film uniformity across the entire surface deteriorates
Solution Approach 1:
The patent changes the volatility and reactivity parameters of the precursor compounds through ligand selection. The specific cyclopentadienyl-based Group 4 metal compounds exhibit optimal vapor pressure and surface reaction characteristics that enable uniform deposition across large-area porous substrates, including complete coverage of trench structures, directly addressing the film uniformity challenge.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound achieves high thermal stability, allowing for the uniform formation of Group 4 metal element-containing films with thicknesses of several nanometers to several tens of nanometers on substrates with deep trenches, even at high temperatures, making it suitable for semiconductor device manufacturing.
Implementation Method 1
a precursor for vapor deposition, e.g., atomic layer deposition or chemical vapor deposition, to form a Group 4 metal element-containing film
Implementation Method 2
a precursor for vapor deposition, e.g., atomic layer deposition or chemical vapor deposition, to form a Group 4 metal element-containing film
Implementation Method 3
a precursor for vapor deposition, e.g., atomic layer deposition or chemical vapor deposition, to form a Group 4 metal element-containing film
Data Source
AI summary
The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds.