Group 5 Metal Precursor for Uniform ALD Film Deposition
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Solution Overview
Problem
Current Group 5 metal precursors, such as PDMAT and TBTDET, are solid and lack thermal stability, making them unsuitable for high-temperature atomic layer deposition methods, especially for forming uniform thin films on uneven surfaces in semiconductor manufacturing.
Innovation Solution
A novel Group 5 metal compound represented by Chemical Formula 1, which can be in a liquid or viscous solid state at room temperature, is synthesized through reacting compounds like (R5N═)M(NR6R7)3 with R1R2R3R4Cp(CH2)nNHR8, offering improved thermal stability and volatility for use in atomic layer deposition and chemical vapor deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If solid Group 5 metal precursor compounds (PDMAT, TBTDET, TBTDEN) are used in chemical deposition methods, then the deposition process can be performed, but the sublimation rate is difficult to control regularly and special devices are needed
Solution Approach 1:
The patent changes the physical state parameter of the precursor compound from solid to liquid by modifying the molecular structure with specific ligand combinations. This allows the precursor to be vaporized using standard direct liquid injection (DLI) systems rather than requiring special solid sublimation devices, thereby improving ease of operation while reducing device complexity
Solution Approach 2:
The invention utilizes the phase transition property of the precursor compound from liquid to vapor during the deposition process. By designing the compound to be liquid at room temperature with appropriate volatility, it can undergo controlled vaporization in standard DLI systems, eliminating the need for special solid-handling equipment
2Temperature
If known Group 5 metal precursor compounds (PDMAT, TBTDET, TBTDEN) are used, then deposition can proceed, but thermal stability is poor making high temperature processing difficult
Solution Approach 1:
The patent creates a composite molecular structure combining Group 5 metal center with specific ligand combinations (amido, alkylamido, cyclopentadienyl, and amino ligands). This composite molecular design provides enhanced thermal stability through strong metal-ligand bonding while maintaining the necessary reactivity for deposition, enabling reliable high-temperature processing
Solution Approach 2:
The invention modifies the chemical composition parameters of the precursor by selecting specific ligand types and their combinations. This changes the thermal decomposition temperature and stability profile of the precursor, allowing it to withstand high processing temperatures (300°C and above) without premature decomposition
3Manufacturing precision
If solid precursors are used, then deposition is possible, but step coverage and uniformity on uneven surfaces are poor
Solution Approach 1:
The patent changes the physical state from solid to liquid and optimizes volatility parameters of the precursor. This enables precise delivery through DLI systems with controlled vaporization rates, ensuring uniform precursor distribution and reaction on uneven substrate surfaces, thereby improving film uniformity while maintaining ease of handling
4Productivity
If liquid precursors with high volatility are used, then deposition rate improves, but thermal stability decreases
Solution Approach 1:
The patent optimizes multiple parameters simultaneously: molecular weight, ligand volatility, and metal-ligand bond strength. This balanced parameter optimization achieves the right combination of volatility (for adequate deposition rate) and thermal stability (for high-temperature processing), resolving the trade-off between productivity and reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel compound enables the formation of high-quality, uniformly thick Group 5 metal-containing layers on substrates with uneven surfaces, suitable for commercial semiconductor manufacturing, with enhanced thermal stability and deposition rates.
Implementation Method 1
A liquid source is advantageous for use in the chemical deposition method or the atomic layer deposition method. However, the rate of sublimation of a solid is proportional to the surface area of the solid which continues to change during sublimation
Implementation Method 2
there is a need for a novel Group 5 metal precursor compound which can be used in commercial manufacturing process of semiconductor devices and has high thermal stability and is in a liquid state or viscous solid state at room temperature
Implementation Method 3
a precursor composition for depositing a Group 5 metal-containing layer containing the Group 5 metal compound, and a method for depositing a Group 5 metal-containing layer using the precursor composition for depositing a Group 5 metal-containing layer
Data Source
AI summary
The present disclosure relates to a novel Group 5 metal compound, a method for preparing the Group 5 metal compound, a precursor composition for depositing a Group 5 metal-containing layer containing the Group 5 metal compound, and a method for depositing a Group 5 metal-containing layer using the precursor composition for depositing a Group 5 metal-containing layer.