Semiconductor Guard Ring Structure With Ion-Blocking Barrier Layer
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining dielectric strength due to charging of intermediate insulation films with external ions, leading to reduced breakdown voltage and potential cracks in the barrier layer.
Innovation Solution
A semiconductor device structure featuring a barrier layer with a smaller diffusion coefficient, sandwiched between the intermediate insulation film and the passivation film, limits ion charging and crack formation by protecting the intermediate insulation film and field plates, while also extending over guard rings to enhance dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the intermediate insulation film is used to protect the field plates, then the field plates are insulated, but external ions charge the intermediate insulation film leading to reduced breakdown voltage
Solution Approach 1:
A barrier layer is introduced as an intermediary between the intermediate insulation film and the passivation film. This barrier layer has a smaller diffusion coefficient than the intermediate insulation film, effectively blocking external ions from reaching and charging the intermediate insulation film, thus preventing breakdown voltage reduction while maintaining the insulation function.
Solution Approach 2:
The patent employs a composite structure consisting of multiple layers with different material properties: the intermediate insulation film (with higher diffusion coefficient) and the barrier layer (with smaller diffusion coefficient). This composite arrangement leverages the complementary properties of each material to achieve both insulation and ion blocking functions simultaneously.
2Reliability
If the passivation film is applied to protect the semiconductor device, then external contamination is prevented, but cracks form in the barrier layer due to stress
Solution Approach 1:
The patent modifies the physical and chemical parameters of the barrier layer, specifically its diffusion coefficient and stress characteristics. By carefully controlling these parameters, the barrier layer can effectively block ions while accommodating stress from the passivation film without cracking, thus maintaining both protection and structural integrity.
3Object-affected harmful factors
If the barrier layer is made with smaller diffusion coefficient to block ions, then ion charging is prevented, but the layer becomes more prone to cracks
Solution Approach 1:
The patent uses a composite structure where the barrier layer (with smaller diffusion coefficient for ion blocking) is combined with the intermediate insulation film and passivation film. This composite arrangement allows each layer to perform its specialized function while the overall structure maintains crack resistance through proper interface design and stress distribution.
Solution Approach 2:
The patent applies different material properties to different layers: the barrier layer has a smaller diffusion coefficient specifically for ion blocking, while the intermediate insulation film has higher diffusion coefficient for stress accommodation. This local differentiation of material properties allows each layer to optimize its specific function without compromising overall structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively limits ion charging and crack formation, maintaining high dielectric strength and preventing a decrease in breakdown voltage, thus improving the reliability and performance of the semiconductor device.
Implementation Method 1
a barrier layer arranged between the intermediate insulation film and the passivation film and having a smaller diffusion coefficient than the intermediate insulation film
Data Source
AI summary
An outer peripheral region of this semiconductor device comprises: a guard ring; an insulating film and an intermediate insulating film that cover a surface of the guard ring; a field plate; a passivation film provided so as to cover both the insulating film and the field plate; and a barrier layer that has a smaller diffusion coefficient than the insulating film and the intermediate insulating film, and than the passivation film. The field plate includes a first section provided within an opening in the insulating film and the intermediate insulating film, and a second section having a protrusion that protrudes outward beyond the first section. The barrier layer has a section that is inserted between the protrusion and the guard ring.