Semiconductor Guard Ring and Buried Gate Structures for Short Channel Effect Mitigation
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Solution Overview
Problem
As semiconductor devices become more integrated and smaller in size, the short channel effect degrades their electrical characteristics, necessitating the development of semiconductor devices with improved gate structures to address this issue.
Innovation Solution
A semiconductor device is designed with a substrate divided into cell and peripheral circuit regions, featuring a guard ring in the interface region and distinct gate structures in each region, including buried and planar-type gate structures, to enhance electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional planar gate structures are used, then manufacturing is simpler, but short channel effect degrades electrical characteristics
Solution Approach 1:
The substrate is divided into distinct cell region and peripheral circuit region, with different gate structures (buried gate in cell region, planar gate in peripheral region) optimized for each functional area, allowing simultaneous improvement of electrical characteristics in memory cells while maintaining simpler structures in peripheral circuits
Solution Approach 2:
Different gate structure types are applied to different regions: buried gate structures in the cell region to mitigate short channel effects and improve electrical characteristics, and planar gate structures in the peripheral circuit region for simpler manufacturing, achieving locally optimized performance
2Productivity
If device size is reduced for higher integration, then productivity increases, but short channel effect worsens electrical characteristics
Solution Approach 1:
The device is segmented into cell and peripheral circuit regions with different gate structures, allowing high-density buried gate structures in cell regions to maintain electrical characteristics despite size reduction, while peripheral regions use planar gates for manufacturing efficiency
Solution Approach 2:
Buried gate structures with extended gate electrodes below the substrate surface are implemented in cell regions to provide better channel control and reduce short channel effects, enabling continued scaling while maintaining electrical performance
3Reliability
If guard ring structures are added to mitigate short channel effect, then electrical characteristics improve, but device complexity increases
Solution Approach 1:
The guard ring function is merged with the isolation layer structure, where the isolation layer forms both the physical separation between regions and the guard ring that mitigates short channel effects, reducing overall device complexity while maintaining electrical performance
Solution Approach 2:
The isolation layer serves multiple functions: it provides electrical isolation between adjacent structures and simultaneously forms the guard ring structure that prevents short channel effects, eliminating the need for separate guard ring components
Data Source
AI summary
A semiconductor device includes a substrate partitioned into a cell region, a peripheral circuit region, and an interface region between the cell region and the peripheral circuit region. A guard ring is provided in the interface region of the substrate and surrounds the cell region. A first gate structure is in the cell region, and a second gate structure is in the peripheral circuit region.