Guard Ring Crack Detection Circuit for Dicing Damage Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Cracks that occur during the dicing process of semiconductor devices can propagate and cause failures in the integrated circuits, leading to malfunction.
Innovation Solution
A semiconductor device design that includes a crack detecting circuit, a guard ring, and conductive sensing lines isolated by the guard ring, with impurity-doped regions for electrical connections, to detect and monitor cracks and prevent their propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a crack detecting circuit is integrated into the semiconductor device, then crack detection capability is improved, but device complexity increases
Solution Approach 1:
A guard ring structure is introduced as an intermediary element between the crack detecting circuit and external environments. The guard ring electrically connects to impurity-doped regions and provides a controlled interface that enables crack detection while isolating the circuit from direct exposure to harmful factors, thus maintaining reliability without proportionally increasing complexity
Solution Approach 2:
The crack detecting circuit is nested within a multi-layered protective structure comprising the guard ring and impurity-doped regions. The circuit is formed over the semiconductor substrate and enclosed by the guard ring, which itself is connected to the impurity-doped regions, creating a nested configuration that integrates detection functionality while providing structural organization
2Measurement precision
If conductive sensing lines are isolated from the crack detecting circuit with guard ring, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The guard ring serves as an intermediary isolation structure between the conductive sensing lines and the crack detecting circuit. This intermediate layer provides electrical connection through impurity-doped regions while maintaining physical separation, enabling precise crack measurement without direct contact that would compromise measurement accuracy
Solution Approach 2:
The device is segmented into distinct functional zones: the conductive sensing lines for crack detection, the guard ring for isolation and connection, and the impurity-doped regions for electrical pathways. This segmentation allows each component to perform its specific function optimally, with sensing lines focused on detection and guard rings on isolation
3Reliability
If guard ring is used to isolate conductive sensing line from crack detecting circuit, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The guard ring is formed as a nested structure that encloses the conductive sensing line while maintaining defined spacing. The sensing line is positioned within the protective perimeter of the guard ring, which itself is connected to the impurity-doped regions in the semiconductor substrate, creating a nested configuration that provides reliability through structured isolation
Data Source
AI summary
A semiconductor device includes a guard ring, a crack detecting circuit, and a conductive sensing line over a semiconductor substrate. The guard ring is electrically connected to a first impurity-doped region of the semiconductor substrate. The conductive sensing line is disposed at a location isolated from the crack detecting circuit with the guard ring interposed therebetween, and is extended along the guard ring and formed in a shape in which both ends of the conductive sensing line are spaced apart from each other. The semiconductor substrate includes a second impurity-doped region buried in the first impurity-doped region and extended to pass under the guard ring, a third impurity-doped region that penetrates the first impurity-doped region so that the third impurity-doped region electrically connects the conductive sensing line to the second impurity-doped region, and a fourth impurity-doped region that electrically connects the crack detecting circuit to the second impurity-doped region.