Guard Ring Fin Structures for Semiconductor Noise Reduction
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Solution Overview
Problem
Conventional guard rings in semiconductor devices with fin-type field effect transistors (FinFETs) are ineffective in reducing substrate coupling noise prior to back-end-of-line (BEOL) processing due to high resistance between fin structures, necessitating a modified structure to enhance electrical connectivity and noise reduction.
Innovation Solution
A guard ring structure comprising parallel fin structures with first and second conductive connection members formed as one structure, where the second conductive connection members electrically connect the first conductive connection members, reducing resistance and improving noise reduction effectiveness, including the use of dummy gates and metal silicide for enhanced connectivity and manufacturing control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional guard ring structure is used with FinFETs, then the device can be manufactured with fin-type transistors, but the resistance between fin structures is high and noise reduction effectiveness is poor
Solution Approach 1:
The guard ring is segmented into multiple fin structures arranged in parallel, with conductive connection members connecting adjacent fins. This segmentation allows each fin to contribute to noise reduction while the connection members ensure low resistance between them, resolving the contradiction between maintaining FinFET structure and achieving effective noise reduction.
Solution Approach 2:
The guard ring structure transitions from a planar monolithic design to a three-dimensional mesh configuration using vertical fin structures connected by conductive members. This dimensional change increases the effective guard ring area and provides multiple parallel conduction paths, significantly reducing resistance while improving noise reduction effectiveness.
2Adaptability or versatility
If fin structures are used in the guard ring, then the device utilizes FinFET technology, but the resistance between fin structures is high prior to BEOL processing
Solution Approach 1:
The conductive connection members are formed to connect the fin structures before BEOL processing begins. This preliminary action ensures that the guard ring achieves low resistance and effective electrical connectivity early in the manufacturing process, enabling proper functionality before subsequent processing steps.
Solution Approach 2:
The guard ring combines semiconductor fin structures with conductive connection members made of appropriate conductive materials. This composite structure leverages the vertical conduction of FinFETs while the conductive members provide lateral connectivity, achieving both FinFET compatibility and low resistance.
3Ease of manufacture
If a monolithic guard ring structure is used, then the manufacturing process is simple, but it is ineffective for FinFET devices with non-planar surfaces
Solution Approach 1:
The monolithic guard ring is segmented into multiple discrete fin structures that can be formed using standard FinFET fabrication processes. This segmentation makes the guard ring adaptable to non-planar FinFET surfaces while still using conventional manufacturing techniques, balancing simplicity and adaptability.
Data Source
AI summary
A semiconductor device includes a plurality of transistor components disposed on a semiconductor substrate, and a guard ring disposed on the semiconductor substrate surrounding the transistor components. The guard ring includes a plurality of fin structures disposed in parallel on the semiconductor substrate, a plurality of first conductive connection members disposed on the fin structures and connecting at least two fin structures, and a plurality of second conductive connection members connecting at least two first conductive connection members. The first conductive connection members and the second conductive connection members are formed as one structure.