Guard Ring Structure for Vertical Semiconductor Interconnect Isolation
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Solution Overview
Problem
Current semiconductor arrangements face challenges in providing effective protection, electrical isolation, and structural integrity for vertical conductive structures, particularly due to limitations in dielectric materials and guard ring configurations, which affect the performance and reliability of semiconductor devices.
Innovation Solution
The semiconductor arrangement incorporates a first portion with a passivation layer, multiple dielectric layers, and a guard ring within the dielectric layers, along with a vertical conductive structure that contacts both the first and second conductive layers, where the guard ring provides protection, electrical isolation, and structural support, utilizing materials like AlN, Al2O3, and Si3N4, and forming techniques such as PVD and CVD to enhance the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric materials and guard ring configurations are used, then manufacturing simplicity is maintained, but protection, electrical isolation, and structural integrity of vertical conductive structures are insufficient
Solution Approach 1:
The dielectric structure is segmented into multiple distinct layers (first dielectric layer, second dielectric layer, third dielectric layer) with different materials and functions. Each layer provides specific protection or isolation properties, collectively enhancing the reliability of vertical conductive structures while maintaining a systematic approach to complexity
Solution Approach 2:
The patent employs composite dielectric structures combining different materials (e.g., silicon oxide, silicon nitride, low-k materials) in specific layer configurations. This composite approach optimizes both protection and electrical isolation properties while managing structural complexity through material diversity
2Reliability
If multiple dielectric layers with different materials are used, then electrical isolation and protection are improved, but manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary protective actions by forming barrier layers and adhesion layers before depositing dielectric materials. These preliminary layers prevent contamination and ensure proper adhesion, improving electrical isolation while streamlining the overall manufacturing process through preventive measures
Solution Approach 2:
The patent utilizes parameter changes in dielectric materials, specifically transitioning from high-k materials to low-k materials in different layers, to optimize electrical isolation. This parameter-based approach allows systematic control of electrical properties while managing fabrication complexity through standardized material selection
3Reliability
If guard rings are formed in dielectric layers, then electrical isolation is improved, but device structure complexity increases
Solution Approach 1:
The guard rings serve as intermediary structures between different conductive elements and dielectric layers. These rings provide intermediate electrical isolation and protection, managing the complexity of electrical isolation by introducing controlled intermediate elements rather than requiring complex direct isolation schemes
Solution Approach 2:
The guard rings are designed to perform multiple functions simultaneously: electrical isolation, mechanical support, and stress management. This multi-functionality reduces overall device complexity by consolidating multiple protective and isolative roles into single structural elements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the protection and structural integrity of the vertical conductive structure, improves electrical isolation, and reduces capacitive coupling, leading to improved performance and reliability of semiconductor devices.
Implementation Method 1
a first dielectric layer over the first passivation layer
Implementation Method 2
forming techniques such as PVD and CVD
Implementation Method 3
forming techniques such as PVD and CVD
Data Source
AI summary
A semiconductor arrangement is provided. The semiconductor arrangement includes a first portion and a vertically conductive structure. The first portion includes a first dielectric layer and a first guard ring in the first dielectric layer. The first guard ring includes, in the first dielectric layer, a first metal layer coupled to a first via. The first portion includes a vertical conductive structure passing through the first dielectric layer and proximate by the first guard ring.