Guard Ring Shields Low-k Film in Through Electrode Formation
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Solution Overview
Problem
The formation of through electrodes using low-dielectric rate insulating films in semiconductor devices is prone to shape abnormalities and reliability issues due to plasma etching and moisture absorption, leading to increased failure rates and degraded performance.
Innovation Solution
A semiconductor device design that incorporates a guard ring formed by series-connected wires and vias in contact with the through electrode, which is buried inside the guard ring, effectively shielding the low-dielectric rate insulating film from plasma and moisture, thereby reducing shape abnormalities and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a low-dielectric rate insulating film is used as an interlayer insulating film in through electrode formation, then wiring density and integration are improved, but the Low-k insulating film retreats during plasma etching or cleaning causing shape abnormalities and reliability degradation
Solution Approach 1:
A guard ring structure is formed beforehand in the Low-k insulating film before plasma etching or cleaning processes. This guard ring acts as a protective barrier that prevents the Low-k film from retreating during subsequent plasma treatment, thereby maintaining the intended processed shape while allowing the use of Low-k materials for high wiring density
Solution Approach 2:
The guard ring serves as an intermediary protective structure between the plasma environment and the Low-k insulating film. It absorbs or blocks the harmful effects of plasma on the Low-k film, preventing direct interaction that would cause film retreat and shape abnormalities
2Ease of manufacture
If plasma etching is performed on Low-k insulating film, then through electrode formation is achieved, but the Low-k materials are damaged and element characteristics are degraded
Solution Approach 1:
The guard ring is formed in advance before plasma etching to protect the Low-k insulating film. This preliminary protective structure allows plasma etching to proceed for through electrode formation while preventing damage to the Low-k material, thereby maintaining element characteristics and reliability
Solution Approach 2:
The guard ring acts as a mediator that enables the plasma etching process to occur without directly exposing the Low-k insulating film to harmful plasma conditions. This intermediary structure facilitates through electrode formation while preserving the integrity of the Low-k material
3Reliability
If Low-k insulating film is exposed to moisture during cleaning or storage, then the film absorbs moisture causing element characteristic degradation, but protection structures increase device complexity
Solution Approach 1:
The guard ring structure is formed as part of the standard fabrication process before the device is completed. This preliminary protective structure prevents moisture absorption during cleaning and storage operations, thereby maintaining element characteristics without requiring additional complex protection measures later
Data Source
AI summary
A semiconductor device includes a wiring layer that includes at least one low-dielectric rate interlayer insulating film layer; a guard ring that is formed by placing in series a wire and a via so as to be in contact with a through electrode, in a portion in which the through electrode passing through the wiring layer is formed; and the through electrode that is formed by being buried inside the guard ring.