Guard Ring Structure for Parasitic Current Blocking in Semiconductor Devices
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Solution Overview
Problem
Semiconductor systems face issues with parasitic bipolar transistors causing noise and latch-up due to parasitic current, leading to circuit failures and current leakage, which existing technologies have not adequately addressed.
Innovation Solution
The implementation of a semiconductor device with a guard ring structure, including multiple guard rings of different conductivity types surrounding a transistor, where the guard rings receive specific biases to form potential barriers that impede carrier movement and stabilize the device operation by blocking parasitic bipolar transistor currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a power transistor is used to transmit power in a semiconductor system, then power transmission capability is improved, but parasitic bipolar transistors generate parasitic current causing noise and latch-up
Solution Approach 1:
Guard rings are introduced as intermediary structures between the power transistor and surrounding circuits. These guard rings act as mediators that intercept and redirect parasitic current before it can cause harmful effects, thereby resolving the contradiction between maintaining power transmission capability and eliminating parasitic current generation
2Reliability
If guard rings are added around the transistor to block parasitic current, then reliability is improved, but device complexity increases
Solution Approach 1:
The guard rings are configured with specific conductivity types (first conductivity type for the first guard ring, second conductivity type for the second guard ring) and assigned specific bias voltages (first bias and second bias respectively). By changing the electrical parameters (conductivity type and bias voltage) rather than merely adding structural elements, the patent achieves reliable parasitic current blocking while maintaining relatively simple device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the gain of parasitic bipolar transistors, preventing unwanted current flow and ensuring stable operation of the semiconductor device by creating potential barriers that capture and redirect carriers, thereby preventing latch-up and noise interference.
Implementation Method 1
the guard rings receive specific biases to form potential barriers that impede carrier movement and stabilize the device operation by blocking parasitic bipolar transistor currents
Data Source
AI summary
Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided.