Semiconductor Guard Ring Reservoir Capacitor Design
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Solution Overview
Problem
The increasing miniaturization and integration of semiconductor devices lead to higher noise levels due to parasitic capacitance, inductance, and resistance, necessitating a method to stabilize power-supply voltage without requiring additional space for reservoir capacitors, which typically occupy peripheral regions.
Innovation Solution
A semiconductor device design where a reservoir capacitor is integrated over a chip guard-ring, utilizing guard rings and metal lines with different voltages to form capacitors between the gate pattern and metal lines, allowing for capacitance formation without additional space, thus maintaining chip size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a reservoir capacitor is disposed in a peripheral circuit region, then the capacitor can provide instantaneous current and stabilize power-supply voltage, but the semiconductor chip size increases
Solution Approach 1:
The reservoir capacitor is merged with the guard ring structure by forming the capacitor within the existing guard ring area. The gate pattern is positioned to overlap with the guard ring, and metal lines are routed over the guard ring to create the capacitor structure, thereby combining two functions (guard ring and reservoir capacitor) into a single integrated structure without increasing chip size
Solution Approach 2:
The reservoir capacitor is formed in the vertical dimension by stacking metal lines and gate patterns over the guard ring structure. The capacitor utilizes the third dimension (vertical layering) rather than expanding horizontally, allowing capacitance formation within the existing chip footprint by utilizing overlapping conductive structures at different elevation levels
2Object-affected harmful factors
If additional space is provided for a reservoir capacitor in remaining regions, then the capacitor can prevent noise and voltage drop, but the chip size unavoidably increases
Solution Approach 1:
The guard ring structure serves dual purposes: it provides its traditional function (isolation/protection) while simultaneously serving as the foundation for the reservoir capacitor. The existing guard ring area and structures are utilized to create the capacitor, eliminating the need for separate dedicated capacitor space and allowing the structure to serve multiple functions within the same footprint
3Productivity
If the chip size is reduced due to miniaturization, then integration increases, but the capacitance becomes insufficient
Solution Approach 1:
The reservoir capacitor is formed in the vertical dimension by stacking metal lines and gate patterns over the guard ring structure. The capacitor utilizes the third dimension (vertical layering) rather than expanding horizontally, allowing capacitance formation within the existing chip footprint by utilizing overlapping conductive structures at different elevation levels
Solution Approach 2:
The guard ring structure serves dual purposes: it provides its traditional function (isolation/protection) while simultaneously serving as the foundation for the reservoir capacitor. The existing guard ring area and structures are utilized to create the capacitor, eliminating the need for separate dedicated capacitor space and allowing the structure to serve multiple functions within the same footprint
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of reservoir capacitors without increasing the chip size, addressing the issue of insufficient capacitance due to reduced chip space and simplifying fabrication, while effectively stabilizing power-supply voltage and preventing noise and voltage drops.
Implementation Method 1
a reservoir capacitor is formed between the gate pattern and the second metal line
Data Source
AI summary
A semiconductor device may be provided. The semiconductor device may include a first guard ring disposed in a first region, and a second guard ring disposed in a second region. The semiconductor device may include a first metal line and a second metal line respectively disposed over the first guard ring and the second guard ring, and respectively coupled to the first guard ring and the second guard ring. The semiconductor device may include a gate pattern coupled to the first metal line or the second metal line, wherein the first metal line and the second metal line are configured to respectively receive a first voltage and a second voltage. The second voltage may have a different potential from the first voltage.