Guard Ring Tungsten Plugs for Uniform Potential Distribution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving high breakdown voltage and reliable electrical connections due to limitations in guard ring structures and processing techniques, which affect the distribution of potential and reliability of electrical connections.
Innovation Solution
A semiconductor device with a guard ring section featuring a circular pattern of tungsten plugs and field plates connected by tungsten plugs, along with an interlayer insulating film and a field plate, enhances the breakdown voltage and reliability by evenly distributing potential and improving contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a conventional guard ring structure is used, then the breakdown voltage is improved, but the potential distribution is not uniform and the electric field concentration cannot be effectively inhibited
Solution Approach 1:
The guard ring structure is segmented into multiple discrete tungsten plugs arranged in a circular pattern, with each plug connected to the P-type guard ring region. This segmentation allows for more uniform potential distribution compared to a continuous guard ring, while still maintaining the breakdown voltage improvement.
Solution Approach 2:
The invention changes the material parameter by using tungsten (higher resistivity) for the plugs instead of highly doped semiconductor regions. It also optimizes geometric parameters including the circular arrangement, spacing between plugs, and connection configuration to achieve uniform potential distribution and effective electric field inhibition.
2Manufacturing precision
If fine processing is applied to the guard ring structure, then the manufacturing precision is improved, but the processing complexity increases
Solution Approach 1:
The invention merges multiple functions into the tungsten plugs: they serve as both the guard ring connection points and the field plates. The interlayer insulating film integrates the isolation function. This merging simplifies the overall structure and reduces processing steps compared to separate guard ring and field plate structures.
Solution Approach 2:
The interlayer insulating film acts as an intermediary between the P-type guard ring region and the tungsten plugs, providing proper electrical isolation and mechanical support. This intermediary layer simplifies the fabrication process by enabling standard planar processing techniques.
3Device complexity
If the guard ring structure is simplified, then the device complexity is reduced, but the electrical connection reliability deteriorates
Solution Approach 1:
The invention uses composite material structure combining P-type semiconductor region, tungsten plugs, and interlayer insulating film. This composite approach achieves reliable electrical connections through the high-quality tungsten-semiconductor interfaces while maintaining structural simplicity.
Solution Approach 2:
The circular arrangement of tungsten plugs connected to the P-type guard ring region creates equipotential zones that uniformly distribute the potential around the active region. This equipotential configuration ensures reliable electrical connections without requiring complex multi-layer structures.
Data Source
AI summary
Provided is a guard ring section to which a fine processing is easily applied. Provided is a semiconductor device comprising: a semiconductor substrate; an active region formed in the semiconductor substrate; and a guard ring section formed more outside than the active region in the semiconductor substrate, wherein the guard ring section includes: a guard ring formed in a circular pattern on an upper surface of the semiconductor substrate; an interlayer insulating film formed above the guard ring; a field plate formed in a circular pattern along the guard ring and above the interlayer insulating film; and a tungsten plug formed in a circular pattern along the guard ring and penetrating the interlayer insulating film to connect the guard ring and the field plate.