Guard Ring Conductive Layer Width for Moisture Protection
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Solution Overview
Problem
In semiconductor devices formed through divided exposure, position displacement between guard ring patterns due to overlay errors in mask alignment can create gaps between the patterns, allowing moisture to enter the element formation region and reduce circuit reliability.
Innovation Solution
A semiconductor device design with a guard ring conductive layer that is wider than the interconnection conductive layer, ensuring that even with position displacement between divided exposure patterns, the guard ring patterns remain connected without gaps, thereby preventing moisture ingress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If divided exposure is used to form a chip region larger than the exposure range, then the chip size can be increased, but position displacement between patterns occurs due to overlay errors of masks
Solution Approach 1:
A guard ring structure is introduced as an intermediary element between the element formation region and the external environment. This guard ring acts as a barrier that compensates for the position displacement caused by overlay errors in divided exposure, preventing moisture ingress while allowing the chip region to be formed through divided exposure processes.
Solution Approach 2:
The guard ring is designed with sufficient width beforehand to cushion or absorb the potential position displacement that will occur during divided exposure. By pre-establishing this protective structure with adequate dimensions, the patent ensures that even when overlay errors occur, the guard ring patterns remain connected and continue to function as a moisture barrier.
2Area of stationary object
If the guard ring pattern width is reduced to minimize area, then the chip area is optimized, but gaps may form between divided patterns due to overlay errors
Solution Approach 1:
The patent optimizes the width parameter of the guard ring pattern to a specific range that balances area minimization with gap prevention. By carefully selecting the guard ring width parameter, the design achieves compact area while ensuring that the patterns remain connected despite overlay errors during divided exposure.
Solution Approach 2:
The guard ring is designed with sufficient width beforehand to cushion or absorb the potential position displacement that will occur during divided exposure. By pre-establishing this protective structure with adequate dimensions, the patent ensures that even when overlay errors occur, the guard ring patterns remain connected and continue to function as a moisture barrier.
3Productivity
If divided exposure is performed for the guard ring region, then manufacturing efficiency is improved, but overlay errors cause gaps between patterns at boundary portions
Solution Approach 1:
The guard ring structure serves as an intermediary that decouples the productivity benefit of divided exposure from the precision requirement of pattern connection. By introducing this protective structure, the patent allows divided exposure to be used for efficiency while the guard ring itself compensates for the precision loss from overlay errors.
Solution Approach 2:
The guard ring is designed with sufficient width beforehand to cushion or absorb the potential position displacement that will occur during divided exposure. By pre-establishing this protective structure with adequate dimensions, the patent ensures that even when overlay errors occur, the guard ring patterns remain connected and continue to function as a moisture barrier.
Data Source
AI summary
A semiconductor device is a semiconductor device in which one chip region is formed through divided exposure. An interlayer insulating film has a via and an interconnection trench in an element formation region and has a guard ring hole in a guard ring region. An interconnection conductive layer is formed in the via and the interconnection trench. A guard ring conductive layer is formed in the guard ring hole. A minimum dimension of a width of the guard ring conductive layer is greater than a minimum dimension of a width of the interconnection conductive layer in the via.


