Photoelectric Conversion Guard Ring Layout for Wire Crossing

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Solution Overview

Problem

The existing photoelectric conversion devices face difficulties in easily forming routed wires that need to cross a guard ring, as both are typically formed using the same metal layer, leading to increased complexity and trouble in their integration.

Innovation Solution

Incorporating an intermediate layer containing the same semiconductor material as the photoelectric conversion layer within the guard ring, allowing the routed wires to be formed at a different layer, thus simplifying the crossing process and reducing the number of steps required.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the guard ring is formed using the same metal layer as the pixels, then moisture or gas entry is inhibited, but the routed wires cannot easily cross the guard ring

Engineering Contradiction:
Improvemoisture and gas barrierVSAvoidwire formation complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent introduces an intermediate layer between the first metal layer (containing routed wires) and the second metal layer (containing guard ring). This adds a dimensional solution by placing the intermediate layer at a different height level, allowing wires to cross the guard ring without direct contact or complex patterning in the same plane.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The intermediate layer acts as a mediator structure that facilitates the crossing of routed wires over the guard ring. It provides a physical bridge or pathway that enables wire connections while maintaining the integrity and barrier function of the guard ring structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If a new metal layer is patterned to form routed wires crossing the guard ring, then wire crossing is achieved, but the number of manufacturing steps increases

Engineering Contradiction:
Improvewire crossing capabilityVSAvoidnumber of manufacturing steps
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The intermediate layer is formed using the same semiconductor material and manufacturing process as the photoelectric conversion layer. This merging of material systems and processes allows the intermediate layer to be created without adding separate metal layer patterning steps, thus achieving wire crossing capability while minimizing increases in manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The intermediate layer serves multiple functions: it acts as a structural support for routed wires, provides a pathway for wire crossing over the guard ring, and is formed using the same material system as the photoelectric conversion layer. This multi-functionality reduces the need for additional specialized layers or processes.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If the intermediate layer uses the same semiconductor material as the photoelectric conversion layer, then wire crossing is simplified, but the guard ring structure becomes more complex

Engineering Contradiction:
Improvewire formation easeVSAvoidguard ring structure complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The intermediate layer is selectively formed only in the regions where routed wires need to cross the guard ring, rather than uniformly across the entire device. This local application maintains the simplicity of the guard ring structure in areas where it is not needed, while providing the necessary wire crossing functionality only where required.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12183749B2Photoelectric conversion device and X-ray imaging device
Publication Date: 2024.12.31 SHARP KK
  • US12183749B2 patent drawing
  • US12183749B2 patent drawing
  • US12183749B2 patent drawing

AI summary

A photoelectric conversion device includes a photoelectric conversion area in which photoelectric conversion elements each including a first electrode, a second electrode, and a photoelectric conversion layer, provided between the first electrode and the second electrode, that contains a semiconductor material are provided in a matrix and a guard ring surrounding a periphery of the photoelectric conversion area in a form of a frame. The guard ring has an intermediate layer containing the same semiconductor material as the photoelectric conversion layer.