Guard-Value ECC for Bit-Level Updates in Non-Volatile Memory

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Solution Overview

Problem

Advanced non-volatile memory (NVM) devices face reliability issues due to reduced voltage ranges between logic values, making them sensitive to noise, and the embedding of error correction codes (ECCs) limits data manipulation, requiring a method to enable independent updating of data without block rewriting.

Innovation Solution

Incorporating a guard field associated with each word of a page, allowing for selective ECC coverage, enabling independent data updates by using a mask value when the guard value is disabled, thus allowing for bit-level manipulation without rewriting entire blocks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If error correction codes (ECCs) are embedded into NVM devices to improve reliability, then data reliability is improved, but data manipulation flexibility deteriorates

Engineering Contradiction:
Improvedata reliabilityVSAvoiddata manipulation flexibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent divides the page into multiple words, with each word having its own guard field. This segmentation allows selective ECC coverage at the word level rather than requiring block-level operations, enabling fine-grained data manipulation while maintaining error correction for only the necessary portions of data.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces dynamic guard fields that can be selectively enabled or disabled for each word. This dynamic control allows the ECC coverage to adapt to the specific manipulation needs, enabling bits to be turned off from ECC coverage when updating data, thus providing flexibility without compromising reliability where needed.

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If guard fields are added to enable selective ECC coverage, then data manipulation flexibility is improved, but device complexity increases

Engineering Contradiction:
Improvedata manipulation flexibilityVSAvoiddevice complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent combines the guard field with the existing ECC structure, integrating the flexibility mechanism into the error correction framework. The guard fields are incorporated as part of the page structure alongside data words and ECC fields, allowing selective coverage without requiring separate complex control systems.

Inventive Principle:
Principle #5Merging (Combining)

3Quantity of substance

If multilevel cells are used to increase storage capacity, then memory density is improved, but reliability deteriorates due to reduced voltage ranges

Engineering Contradiction:
Improvememory densityVSAvoiddevice reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies error correction selectively to specific words rather than uniformly across the entire page. This local quality approach allows high-reliability ECC protection for words containing critical or unchanged data, while allowing flexibility for words being updated, optimizing the balance between reliability and manipulation capability in multilevel cells.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS8645792B2Memory with guard value dependent error correction
Publication Date: 2014.02.04 MICRON TECHNOLOGY INC
  • US8645792B2 patent drawing
  • US8645792B2 patent drawing
  • US8645792B2 patent drawing

AI summary

Embodiments of the present disclosure provide methods, systems, and apparatuses related to calculating an error correction code for a program page dependent on guard values that correspond to words of the program page. Other embodiments may be described and claimed.