Microelectronics H-Frame Packaging With Sealed RF Vertical Interconnects
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Solution Overview
Problem
Current microelectronics packaging technologies face challenges in creating compact, sealed environments for radio frequency (RF) components that maintain signal integrity and prevent radiation leakage while allowing for efficient signal transmission and vertical interconnects without mechanical holes or connectors.
Innovation Solution
A microelectronics H-frame device is developed, comprising a stack of substrates with micro-machined covers and metallization, using through-substrate vias and bonding bumps for electrical connections, and mid-substrate metallization for shielding, allowing RF signals to escape without mechanical openings, and featuring alcoves for directional electric field transformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional packaging with mechanical holes and connectors is used, then signal transmission is achieved, but radiation leakage occurs and signal integrity deteriorates
Solution Approach 1:
The patent replaces traditional mechanical holes and connectors with fully integrated through-substrate vias and metallization structures. The RF signals escape through metallized vias that pass through the substrate, eliminating the need for mechanical openings and connectors. This substitution maintains signal integrity while preventing radiation leakage, as the metallized vias provide controlled impedance paths and the sealed package structure contains electromagnetic fields.
Solution Approach 2:
The patent changes the physical and electrical parameters of the package structure by implementing specific via dimensions, metallization thicknesses, and substrate material properties. The through-substrate vias are designed with controlled diameters and metallization layers to maintain characteristic impedance, while the sealed package structure modifies the electromagnetic field distribution to prevent radiation leakage.
2Reliability
If the package is sealed to contain RF signals, then radiation leakage is prevented, but signal transmission efficiency decreases
Solution Approach 1:
The patent introduces metallized through-substrate vias as intermediary structures that mediate between the sealed package environment and RF signal transmission requirements. These vias serve as controlled impedance transmission paths that allow signals to pass through the sealed package structure without radiation leakage. The metallization layers on the vias provide continuous electrical connections while the sealed package contains electromagnetic fields, resolving the contradiction between sealing and signal transmission.
3Device complexity
If through-substrate vias are used for vertical interconnects, then compact sealed design is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary actions in the manufacturing process by pre-drilling and pre-plating via holes before substrate assembly. The through-substrate vias are formed with precise dimensions and metallization layers applied in advance, ensuring proper alignment and electrical connections. This preliminary preparation of via structures reduces the precision requirements during final assembly, as the critical dimensions and positions are established in earlier manufacturing steps.
4Reliability
If mid-substrate metallization is added for shielding, then radiation containment improves, but device complexity increases
Solution Approach 1:
The patent implements mid-substrate metallization layers that serve multiple functions simultaneously: they provide electromagnetic shielding to contain radiation, establish reference planes for controlled impedance transmission lines, and create electrical connections between different substrate layers. This multi-functionality of the metallization structures achieves radiation containment without proportionally increasing device complexity, as the same metallization layers perform multiple critical functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a compact, sealed package with minimal electrical reflection loss and effective radiation containment, enabling efficient RF signal transmission and vertical interconnects while maintaining environmental integrity.
Implementation Method 1
The metalized layer between the two middle substrates enables the signals to escape the microelectronics H-Frame housing without a need to add one or more of mechanical holes and connectors into the housing
Implementation Method 2
The levels are bonded using compression bonding
Implementation Method 3
wafer-scaled eutectic alloy bonding is used to bond together the upper and lower silicon micro-machined cavities with the stack of two or more substrates
Implementation Method 4
the upper and lower cavities are bonded with the center conductor using one or more of a wafer-scale gold-indium bond and a wafer-scale gold-gold bond
Implementation Method 5
the upper and lower cavities are bonded with the center conductor using one or more of a wafer-scale gold-indium bond and a wafer-scale gold-gold bond
Data Source
AI summary
A method for fabricating a micro-electronics H-frame device is provided by micro-machining a top cover usable in the device, and micro-machining a bottom cover usable in the device. The method includes fabricating together on a front of a wafer a top surface of a top substrate, the top substrate usable in the device, and a bottom surface of a bottom substrate, the bottom substrate usable in the device, wherein the top surface of the top substrate comprises top substrate top metallization, and wherein the bottom surface of the bottom substrate comprises bottom surface bottom metallization. In addition, fabricating mid-substrate metallization, bonding the top substrate to the top cover, and bonding the bottom substrate to the bottom cover are performed. The top substrate is bonded to a top surface of the mid-substrate metallization and bonding the bottom substrate to a bottom surface of the mid-substrate metallization, thereby creating a vertical electrical connection between the top substrate and the bottom substrate.