Low Temperature Oxide Layer Uniformity via H2/O2 Side Injection
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Solution Overview
Problem
High-temperature thermal growth processes for oxide layers in semiconductor devices and LEDs result in non-uniform thickness due to reduced thermal budgets and stringent critical dimension requirements, necessitating improved methods for forming oxide layers at lower temperatures with enhanced thickness uniformity.
Innovation Solution
A method involving heating a substrate to less than 700 degrees Celsius, controlling the flow rates and compositions of gas mixtures containing oxygen and hydrogen, and using temperature tuning to form an oxide layer with non-uniformity of less than one percent, ensuring uniform thickness across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide layers are thermally grown at high temperatures (greater than 700 degrees Celsius), then suitable dielectric properties and layer quality are achieved, but reduced thermal budgets and stringent critical dimension requirements make the process unsuitable for advanced device nodes
Solution Approach 1:
The patent changes the temperature parameter from high (greater than 700°C) to low (less than 700°C) and compensates by optimizing gas flow parameters (oxygen and hydrogen flow rates and compositions) to maintain oxidation effectiveness at the lower temperature, making the process suitable for advanced device nodes while preserving dielectric properties
2Temperature
If oxide layers are thermally grown at lower temperatures (less than 700 degrees), then thermal budget requirements are met, but the reaction rate becomes slower, resulting in oxide layers having non-uniform thickness
Solution Approach 1:
The patent introduces side gas inlets that deliver oxygen and hydrogen gases directly to different regions of the substrate, creating locally optimized gas concentration gradients that compensate for the slower reaction rate at lower temperatures and ensure uniform oxide thickness across the entire substrate surface
Solution Approach 2:
The patent uses controlled gas flow dynamics through multiple inlet ports to distribute oxygen and hydrogen reactants uniformly across the substrate surface, using fluid dynamics to overcome the reduced reaction rate at lower temperatures and achieve uniform thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves oxide layer thickness uniformity of less than one percent, improving the dielectric properties and layer quality, suitable for advanced device nodes, by optimizing gas flow and temperature distribution in the processing chamber.
Implementation Method 1
heating the substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius
Implementation Method 2
flowing second gas mixture into the processing chamber from a second gas inlet. The second gas mixture includes an oxygen containing gas and a hydrogen containing gas
Implementation Method 3
controlling a flow rate of the second gas mixture, a composition of the second gas mixture, a flow rate of the first gas mixture, a composition of the first gas mixture
Data Source
AI summary
A method for forming an oxide layer having improved thickness uniformity on a substrate is disclosed. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.