Crystallized Hafnium Oxide Gate Insulator for Leakage Reduction
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Solution Overview
Problem
Silicon dioxide (SiO2) used in metal oxide semiconductor (MOS) transistors experiences high power consumption due to direct tunneling leakage current and has a weak diffusion barrier against impurities, leading to reliability issues and leakage.
Innovation Solution
A method of manufacturing semiconductor devices using a high-k thin film, specifically forming a crystallized hafnium oxide (HfOx) layer with a hafnium cobalt oxide (HfCoOx) layer, where the hafnium oxide layer is formed using atomic layer deposition and heat treatment, and the substrate includes materials like Al, Si, or TiN, with a silicon dioxide layer optionally added between the substrate and the hafnium oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon dioxide (SiO2) is used as a gate insulating layer, then the device structure is simple and manufacturing is easy, but power consumption increases due to direct tunneling leakage current and reliability degrades
Solution Approach 1:
The patent uses a composite insulating layer structure combining silicon dioxide (SiO2) with high-k materials (such as hafnium oxide, aluminum oxide, or their combinations). The SiO2 layer provides good interface characteristics and manufacturing compatibility, while the high-k material layer provides superior insulation performance and reliability, thus resolving the contradiction between ease of manufacture and reliability.
Solution Approach 2:
The patent changes the dielectric constant parameter by introducing high-k materials with k-values greater than 5 (preferably 7 or higher) into the insulating layer structure. This parameter change allows achieving the required insulation performance with reduced thickness, thereby reducing direct tunneling leakage current while maintaining manufacturing feasibility.
2Loss of energy
If silicon dioxide (SiO2) thickness is reduced, then direct tunneling leakage current decreases, but the diffusion barrier against impurities becomes weaker causing leakage from gate electrode
Solution Approach 1:
The patent employs a composite structure where the high-k material layer provides both excellent insulation properties to reduce direct tunneling leakage and strong diffusion barrier characteristics to prevent impurity leakage from the gate electrode, thus simultaneously addressing both reliability concerns.
Solution Approach 2:
The patent applies different material properties to different regions of the insulating layer: the SiO2 layer provides good interface quality and oxidation resistance, while the high-k material layer provides superior insulation and diffusion barrier properties, optimizing local characteristics to solve the contradiction.
3Reliability
If high-k materials are used to maintain field-effect performance, then insulation performance improves, but the material complexity and manufacturing difficulty increase
Solution Approach 1:
The patent divides the insulating layer into multiple functional segments: a SiO2 layer for interface quality and a high-k material layer for insulation performance. This segmentation allows each layer to perform its specialized function optimally while maintaining overall manufacturing feasibility through established processes.
Solution Approach 2:
The patent selects high-k materials that can serve multiple functions simultaneously: providing high dielectric constant for insulation, forming good interfaces with silicon, offering strong diffusion barriers, and being compatible with existing semiconductor manufacturing processes, thus reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces power consumption and enhances the diffusion barrier, improving the reliability and field-effect performance of semiconductor devices by utilizing high-k materials like hafnium oxide with a crystallized structure, suitable for applications in ferroelectric field effect transistors and high-k capacitors.
Implementation Method 1
crystallizing the hafnium oxide layer using a heat treatment process
Implementation Method 2
The hafnium oxide layer may be formed using an atomic layer deposition method
Data Source
AI summary
A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.