Half-Bridge Semiconductor Layout for Oscillation and Heat Control

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Solution Overview

Problem

In large-capacity semiconductor devices, the long distances between transistors on conductor patterns lead to high source inductance, causing oscillation, malfunction, increased loss, or destruction of transistors during switching.

Innovation Solution

The semiconductor device configuration includes a half-bridge circuit with transistors arranged to increase the gate inductance-to-source inductance ratio by using divided conductor patterns and high-inductance wires to connect gate terminals, and dispersing transistors to enhance heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If transistors are arranged far apart on conductor patterns, then heat dissipation is improved, but source inductance increases causing oscillation and malfunction

Engineering Contradiction:
Improveheat dissipationVSAvoidtransistor oscillation and malfunction
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The conductor patterns are divided into multiple segments (first conductor pattern, second conductor pattern, third conductor pattern, fourth conductor pattern) with different shapes and positions. This segmentation allows each conductor pattern to be optimized for its specific function while maintaining overall circuit performance, resolving the contradiction between heat dissipation and inductance control.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different conductor patterns are assigned different local qualities (shapes, positions, and configurations) to optimize their specific functions. For example, certain conductor patterns are designed with specific geometries to minimize inductance in critical paths while allowing adequate spacing for heat dissipation in other areas.

Inventive Principle:
Principle #3Local quality

2Area of stationary object

If long conductor patterns are used to connect transistors, then device area is reduced, but source inductance increases causing increased loss

Engineering Contradiction:
Improvedevice areaVSAvoidswitching loss
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

The conductor patterns are segmented into multiple sections with different configurations. This allows the conductor paths to be optimized for minimal inductance in critical switching paths while still achieving compact overall device layout, thereby reducing switching loss without sacrificing area efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Instead of using single long conductor patterns, the invention inverts the approach by using multiple short segmented patterns that achieve the same connectivity function with reduced total length and lower inductance, thereby reducing energy loss.

Inventive Principle:
Principle #13The other way round (Inversion)

3Temperature

If transistor spacing is increased for heat dissipation, then thermal performance improves, but gate inductance-to-source inductance ratio decreases

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidtransistor oscillation suppression
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The gate and source conductor patterns are segmented and configured differently to independently optimize their properties. This allows the gate conductor pattern to be designed for high inductance (to suppress oscillation) while the source conductor pattern is optimized for low inductance, even when transistors are spaced far apart for heat dissipation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different local qualities are assigned to gate and source conductor patterns. The gate conductor pattern is designed with specific geometric properties to maximize inductance, while the source conductor pattern is optimized for minimal inductance, allowing the transistor spacing to be maximized for heat dissipation without compromising oscillation suppression.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20260053030A1Semiconductor device
Publication Date: 2026.02.19 KK TOSHIBA
  • US20260053030A1 patent drawing
  • US20260053030A1 patent drawing
  • US20260053030A1 patent drawing

AI summary

According to one embodiment, semiconductor device includes: a substrate; first to fourth conductive portions provided on the substrate; a first transistor having a drain and a source connected to the first and the second conductive portion, respectively; and second and third transistors each having a drain, a source, and a gate connected to the second, the third, and the fourth conductive portion, respectively; wherein the fourth conductive portion includes sixth and seventh portions to which each of the gate of the second and the third transistors is connected, respectively, and an eighth portion connecting the sixth portion and the seventh portion, and a shape of the eighth portion is different from a shape of the sixth and the seventh portions.