Half-Bridge Switch Layout for Low Inductance and Cooling
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Solution Overview
Problem
Half-bridge switch arrangements in power converters face challenges with high DC link inductance and thermal impedance due to parallel connections of discrete semiconductor switching elements, which are difficult to cool effectively, especially at high currents and switching frequencies.
Innovation Solution
A half-bridge switch arrangement with parallel-connected discrete semiconductor switching elements, utilizing a heat sink with a stepped profile and busbars arranged close together for efficient cooling, and reduced inductive resistance, along with copper busbars and insulating layers to minimize parasitic inductance and thermal impedance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If parallel-connected discrete semiconductor switching elements are used to achieve high power scalability and high current levels, then power scalability is improved, but DC link inductance increases
Solution Approach 1:
The patent merges the semiconductor switching elements, busbars, and heat sink into a single integrated power module. The discrete switching elements are mounted directly on the heat sink with busbars connecting them in parallel, creating a compact assembly where the total inductance is minimized by reducing the loop area between current paths. This combining approach maintains high power scalability while reducing the harmful DC link inductance effect.
Solution Approach 2:
The patent implements a nested structure where semiconductor switching elements are mounted on the heat sink surface, with busbars positioned between the switching elements and the heat sink. The switching elements are electrically connected to the busbars, which are in turn connected to the heat sink, creating a compact nested arrangement that minimizes the current loop area and reduces inductance while maintaining high current handling capability.
2Power
If parallel-connected discrete semiconductor switching elements are used to achieve high current levels, then current capacity is improved, but thermal cooling becomes more difficult
Solution Approach 1:
The patent combines multiple semiconductor switching elements with a common heat sink in an integrated module. The heat sink provides a unified thermal management solution for all switching elements, allowing efficient heat dissipation even at high current levels. This merging approach simplifies the cooling system while handling the thermal load from multiple parallel-connected high-current switches.
3Power
If discrete semiconductor switching elements are used instead of integrated circuits, then power scalability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple discrete semiconductor switching elements, busbars, and heat sink into a single integrated power module. This integration reduces the overall system complexity by eliminating the need for separate mounting and connection of individual components. The module provides high power scalability through parallel-connected switching elements while presenting a simplified interface for system integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves low intermediate circuit inductance and thermal impedance, enabling effective cooling and high power scalability with reduced costs, suitable for high-speed switching and maintaining junction temperatures at desired levels.
Implementation Method 1
Heat generated by the semiconductor switching elements can be transferred directly to the heat sink and dissipated from it
Implementation Method 2
The heat sink can be fluid-cooled and have an inlet and outlet for a corresponding cooling fluid
Data Source
AI summary
A half-bridge switch arrangement includes a high-side switch having a plurality of parallel-connected first semiconductor switching elements, a low-side switch having a plurality of parallel-connected second semiconductor switching elements, a positive busbar to which a terminal of each of the first semiconductor switching elements of the high-side switch is electrically connected, a negative busbar to which a terminal of each of the second semiconductor switching elements of the low-side switch is electrically connected, and a heat sink, the heat sink having a first section and a second section disposed on the first section, the first semiconductor switching elements and the second semiconductor switching elements being disposed on the second section, wherein the positive busbar and the negative busbar are disposed one above the other on an upper surface of the first section.