Interleaved Half-Bridge Transistor Structure for Shoot-Through Immunity
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Solution Overview
Problem
Half bridge circuits in high power conversion systems are prone to shoot-through due to voltage surges at the low side transistor gate, despite synchronization of gate drivers, leading to potential damage and inefficiency.
Innovation Solution
The low side transistor is designed with interleaved source and gate regions connected in parallel, forming a compound source and gate with increased built-in capacitance, reducing the impedance between the gate and source to mitigate voltage swings and prevent shoot-through.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dead-time is introduced to prevent shoot-through, then reliability is improved, but switching speed deteriorates
Solution Approach 1:
The low side transistor's own gate-source capacitance is enhanced through the interleaved structure to serve as the protective element against shoot-through, eliminating the need for external capacitors or additional protective components while maintaining reliability during dead-time periods
Solution Approach 2:
The gate-source capacitance value is increased by changing the physical structure of the transistor (interleaved source and gate regions), which modifies the electrical parameters to provide better shoot-through protection while allowing faster switching transitions
2Device complexity
If conventional LS transistor design is used, then device complexity is low, but immunity to shoot-through deteriorates
Solution Approach 1:
The source region is divided into multiple interleaved source regions alternating with gate regions, creating a segmented structure that increases the effective gate-source capacitance and improves shoot-through immunity without requiring additional external components
Solution Approach 2:
Multiple source regions and gate regions are merged in parallel to form a compound source and compound gate structure, effectively increasing the total gate-source capacitance while maintaining a single transistor device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the half bridge's immunity to shoot-through, allowing for faster switching and higher efficiency by moderating voltage swings and reducing the likelihood of damaging current surges.
Implementation Method 1
the interleaved source regions and gate regions endow the LS transistor with a relatively large, built-in gate-source capacitance connected by relatively low impedance current channels between the compound gate and the compound source
Data Source
AI summary
A semiconductor transistor comprising: a drain region; a plurality of source regions; and a plurality of gate regions interleaved with the source regions.