Halftone Mask for LTPS Array Substrate Patterning
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Solution Overview
Problem
The manufacture process of Low Temperature Poly-silicon (LTPS) array substrates is complex and costly due to the need for multiple masks in the patterning and doping processes, which increases production expenses.
Innovation Solution
A halftone mask is used to simplify the pattern process and N-type heavy doping of the polysilicon layer, reducing the number of masks required and thereby lowering production costs, while maintaining fine electronic properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used for polysilicon patterning, channel doping, and N-type heavy doping, then the manufacturing precision is improved, but the device complexity and production cost increase
Solution Approach 1:
The patent combines the polysilicon patterning process and N-type heavy doping process into a single exposure and development step using a halftone mask. The halftone mask's varying optical density regions allow simultaneous formation of polysilicon patterns and doping regions, merging two previously separate mask-based processes into one, thereby reducing process complexity while maintaining manufacturing precision
Solution Approach 2:
The halftone mask serves multiple functions: it acts as both the patterning mask for polysilicon and the doping mask for N-type heavy doping. The mask's different optical density regions enable it to perform multiple roles in a single exposure step, eliminating the need for separate masks and reducing overall process complexity
2Manufacturing precision
If multiple masks are used for polysilicon patterning, channel doping, and N-type heavy doping, then the manufacturing precision is improved, but the production cost increases
Solution Approach 1:
The patent combines the polysilicon patterning process and N-type heavy doping process into a single exposure and development step using a halftone mask. The halftone mask's varying optical density regions allow simultaneous formation of polysilicon patterns and doping regions, merging two previously separate mask-based processes into one, thereby reducing process complexity while maintaining manufacturing precision
Solution Approach 2:
The halftone mask serves multiple functions: it acts as both the patterning mask for polysilicon and the doping mask for N-type heavy doping. The mask's different optical density regions enable it to perform multiple roles in a single exposure step, eliminating the need for separate masks and reducing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces production costs by eliminating one mask and maintains the high electronic performance of the Low Temperature Poly-silicon array substrate.
Implementation Method 1
employing a halftone mask to implement exposure, development to the photoresist layer
Implementation Method 2
employing a low temperature crystallization process to convert the amorphous silicon layer into a polysilicon layer
Data Source
AI summary
The present invention provides a manufacture method of a Low Temperature Poly-silicon array substrate. A halftone mask is utilized to realize the pattern process to the polysilicon layer and the N type heavy doping process of the polysilicon section of the NMOS region. In comparison with prior art, one mask is eliminated, and thus, the production cost is reduced, and the manufactured Low Temperature Poly-silicon array substrate possesses fine electronic property.