Halftone Mask for Semiconductor Impurity Implantation

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Solution Overview

Problem

Existing semiconductor manufacturing methods require multiple photolithographic masks and complex processes, leading to increased costs and reduced productivity, particularly in forming high- and low-impurity-concentration areas and gate electrodes in thin-film transistors.

Innovation Solution

A method involving the use of a single halftone mask for forming both high- and low-impurity-concentration areas and gate electrodes, where the impurity is implanted using separated resist layers and the gate electrode as a mask, reducing the number of photo-etching processes and masks needed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple photolithographic masks and complex processes are used to form high- and low-impurity-concentration areas and gate electrodes, then manufacturing precision and reliability are improved, but device complexity and manufacturing cost increase

Engineering Contradiction:

Improveprecision in forming impurity concentration areasVSAvoidcomplexity of photolithographic processes

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple photolithographic masks into a single halftone mask that simultaneously defines high-impurity-concentration areas, low-impurity-concentration areas, and gate electrode patterns. This merging of multiple masking steps into one reduces process complexity while maintaining the precision needed for forming distinct impurity concentration regions.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The halftone mask serves multiple functions: it acts as a single mask that simultaneously patterns both high- and low-impurity-concentration areas as well as the gate electrode. This multi-functional approach eliminates the need for separate masks for each feature, reducing device complexity while preserving manufacturing precision.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Manufacturing precision

If multiple photolithographic masks and etching steps are used, then manufacturing precision is improved, but productivity decreases

Engineering Contradiction:

Improveprecision in pattern formationVSAvoidproduction efficiency

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

By merging multiple sequential photolithographic and etching steps into a single halftone mask-based process, the patent reduces the total number of processing cycles required. This consolidation maintains the precision of pattern formation while significantly improving productivity by eliminating repeated mask alignment and etching operations.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The halftone mask is designed in advance to contain all necessary pattern information for high-impurity-concentration areas, low-impurity-concentration areas, and gate electrodes in a single structure. This preliminary preparation of a comprehensive mask eliminates the need for multiple sequential masking steps, thereby improving productivity without sacrificing precision.

Inventive Principle:

Principle #10Preliminary action

3Manufacturing precision

If multiple masks are used for forming impurity concentration areas and gate electrodes, then manufacturing precision is improved, but manufacturing cost increases

Engineering Contradiction:

Improveprecision in forming transistor structuresVSAvoidmanufacturing cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent merges the functions of multiple expensive photolithographic masks into a single halftone mask. This consolidation reduces material costs and process complexity while maintaining the precision required for forming transistor structures with distinct impurity concentration regions.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The halftone mask is designed as a universal masking solution that simultaneously patterns high-impurity-concentration areas, low-impurity-concentration areas, and gate electrodes. This multi-functional approach eliminates the need to purchase and process multiple specialized masks, thereby reducing manufacturing cost while preserving precision.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the manufacturing process, reduces costs, and enhances processing accuracy by allowing flexible pattern formation with fewer masks and etching steps, enabling the creation of high-definition display devices with smaller peripheral circuits.

Implementation Method 1

implanting an impurity into the semiconductor layer by using the first portion and the second portion as masks

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS9620624B2Method of manufacturing a semiconductor device

Publication Date: 2017.04.11 MAGNOLIA WHITE CORP

AI summary

According to one embodiment, a method of manufacturing a semiconductor device comprises forming a semiconductor layer on a substrate, forming a first insulating film on the semiconductor layer, forming a metal layer on the first insulating film, forming a first portion and a second portion in the metal layer, implanting an impurity into the semiconductor layer by using the first portion and the second portion as masks, forming a gate electrode by reducing the second portion in addition to removing the first portion, and implanting an impurity into the semiconductor layer by using the gate electrode as a mask.