Halide-Inhibited CVD Gapfill for Void-Free Metal Deposition
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Solution Overview
Problem
Traditional deposition methods result in high deposition rates leading to material accumulation near feature openings, causing voids and seams, which can lead to device failure in semiconductor manufacturing, particularly in complex structures like 3DNAND and DRAM.
Innovation Solution
Exposing a substrate surface to a halide-containing growth inhibitor and a metal halide precursor with a reactant to form a metal-containing layer, utilizing chemical vapor deposition or atomic layer deposition to achieve lower growth rates and superconformal deposition, ensuring complete gapfill without voids or seams.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional deposition methods are used, then deposition rate is high, but material accumulates near feature openings causing voids and seams
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by introducing a halide-containing growth inhibitor into the deposition environment. This chemical modification reduces the deposition rate and enables superconformal growth, allowing complete filling of high aspect ratio features without voids or seams while maintaining productivity.
Solution Approach 2:
The halide-containing growth inhibitor acts as an intermediary substance that mediates between the deposition process and the substrate features. It selectively interacts with the substrate surface to control deposition behavior, enabling bottom-up gapfill in complex structures without requiring traditional conformal deposition methods.
2Manufacturing precision
If traditional ALD with conformal coverage is used, then deposition is uniform, but it fails to provide superconformal growth in complex re-entrant structures
Solution Approach 1:
The patent modifies the deposition parameters by introducing a halide-containing growth inhibitor, which changes the surface chemistry and enables superconformal growth. This allows the deposition process to adapt to complex re-entrant structures like 3DNAND, DRAM, and MEOL logic features, providing bottom-up gapfill where traditional conformal ALD fails.
3Productivity
If high deposition rate is maintained, then productivity is high, but defects such as voids and seams are introduced
Solution Approach 1:
The patent introduces a halide-containing growth inhibitor that changes the deposition kinetics. This parameter change allows the process to achieve both high productivity and high reliability by enabling superconformal growth that fills features completely without voids or seams, even at reduced deposition rates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides controlled deposition rates, resulting in superconformal deposition and bottom-up gapfill, preventing voids and seams, thereby enhancing the reliability and integrity of semiconductor devices.
Implementation Method 1
exposing a substrate surface to a halide-containing growth inhibitor and exposing the substrate surface to a metal halide precursor and a reactant to form a metal-containing layer
Implementation Method 2
The treated surface is exposed to a molybdenum halide precursor to chemisorb molybdenum species onto the treated surface within the trench
Implementation Method 3
exposing the substrate surface to a metal halide precursor and a reactant to form a metal-containing layer
Implementation Method 4
exposing a dielectric surface with a feature formed therein to HCl, MoO2Cl2, and hydrogen gas (H2) to form a molybdenum layer within the trench
Data Source
AI summary
A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.