Wafer-Level Integration of Hall and AMR Sensors for 360° Position Sensing
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Solution Overview
Problem
Magnetoresistive sensors are limited to 180° rotation detection, requiring multiple discrete sensors for 360° sensing, which increases system size, complexity, and cost.
Innovation Solution
Integration of magnetoresistive and Hall-effect sensors in a single integrated circuit, with anisotropic magnetoresistive sensors and vertical/horizontal Hall sensors, allowing for compact 360° rotation and position sensing by forming sensors on a substrate with transistors and metallization structures, enabling precise detection through wafer-scale integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple discrete sensors are used to achieve 360° sensing capability, then the sensing range is improved, but the device complexity and system size increase
Solution Approach 1:
The patent combines multiple discrete sensors (Hall effect sensors and magnetoresistive sensors) into a single integrated circuit device. This merging approach maintains the 360° sensing capability while reducing system complexity by integrating what would otherwise require multiple separate components on a printed circuit board into one unified sensor device with a single housing and substrate.
Solution Approach 2:
The integrated circuit is designed to perform multiple sensing functions simultaneously - detecting both magnetic field strength (via Hall effect sensors) and magnetic field direction/orientation (via magnetoresistive sensors) to achieve comprehensive 360° rotational and positional sensing capability within a single device that can replace multiple discrete sensors.
2Adaptability or versatility
If multiple discrete sensors are positioned on a printed circuit board to provide 360° sensing, then the sensing capability is improved, but the area occupied increases
Solution Approach 1:
Multiple sensing elements that would occupy separate areas on a printed circuit board are merged into a single integrated circuit substrate. The Hall effect sensors and magnetoresistive sensors are fabricated on the same substrate and housed together, dramatically reducing the total area required for 360° sensing capability from a distributed PCB layout to a compact single device.
Solution Approach 2:
The patent employs a nested structure where magnetoresistive sensors are formed within metallization layers that are part of the integrated circuit substrate, and Hall effect sensors are integrated on the same substrate. This nesting of sensing elements within the same physical device and housing reduces the overall footprint compared to discrete sensors distributed across a PCB.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates high-precision 360° rotation and 3-D position sensing with reduced manufacturing costs and mechanical complexity, providing a compact solution for various applications by combining sensors in a single IC.
Implementation Method 1
Hall effect sensors are one form of sensor that provides detection of magnetic fields
Implementation Method 2
anisotropic magnetoresistive (AMR) sensors provide improved sensitivity relative to Hall-effect sensors
Data Source
AI summary
Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.