Hall Effect Non-Destructive Memory Reading System

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing non-volatile electronic systems face issues with destructive reading mechanisms and material endurance limitations in memory devices, such as Ferroelectric Random Access Memory (Fe-RAM) and Phase Changing Random Access Memory (PC-RAM), which require high voltages and lead to errors and reduced device longevity.

Innovation Solution

An electronic system with non-volatile writing by electrical control and reading by Hall effect, comprising a stack of layers including a remanent subassembly, a two-dimensional electron gas, and a magnetic subassembly, where the writing device modulates the electrical resistance of the two-dimensional electron gas without reversing magnetization, and the Hall-effect reading device measures voltage between contacts to determine remanent states without altering them.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a voltage pulse is applied to read the Fe-RAM state, then the current can indicate the stored state, but the reading mechanism becomes destructive and erases the stored memory state

Engineering Contradiction:

Improvereading accuracyVSAvoidmemory state erasure

Core Design Contradiction:

Measurement precisionVSLoss of information

Solution Approach 1:

The patent introduces a two-dimensional electron gas as an intermediary layer between the ferroelectric layer and the measurement contacts. The Hall effect measurement of this electron gas indirectly detects the ferroelectric polarization state without requiring a voltage pulse that would destroy the stored information, thus enabling non-destructive reading

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces the conventional current-based read mechanism with a Hall effect-based measurement mechanism. Instead of measuring current flow through the ferroelectric layer (which requires destructive voltage pulses), the system measures the Hall voltage generated by a two-dimensional electron gas in response to the ferroelectric field, enabling non-destructive reading

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If high voltage is applied to write information in Re-RAM, then the dielectric material can switch between insulating and conductive states, but the application of high voltage causes errors and reduces device endurance

Engineering Contradiction:

Improvedevice enduranceVSAvoidwriting voltage

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the measurement parameter from longitudinal resistance (which requires high write voltages in Re-RAM) to Hall voltage. This parameter change allows the system to detect the resistance state indirectly through the Hall effect, enabling non-destructive reading at lower voltages and improving device endurance

Inventive Principle:

Principle #35Parameter changes

3Loss of information

If the Fe-FET uses a ferroelectric element as a non-volatile gate, then the reading mechanism becomes non-destructive, but partial depolarization occurs and material choices are limited

Engineering Contradiction:

Improvememory state preservationVSAvoidreading accuracy

Core Design Contradiction:

Loss of informationVSMeasurement precision

Solution Approach 1:

The two-dimensional electron gas serves as an intermediary that couples to the ferroelectric polarization without causing partial depolarization. The electron gas responds to the ferroelectric field through the Hall effect, allowing accurate state detection while preserving the full polarization state

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables non-destructive reading and improved write and read performance with enhanced material endurance, using compatible voltages below 10 volts and supporting high carrier densities, thus overcoming the limitations of prior systems.

Implementation Method 1

reading by Hall effect, the Hall-effect reading device suitable for reading the remanent state of the remanent-state subassembly by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential

Methodology Applied

Scientific EffectHall effect: Hall Effect

Implementation Method 2

writing remanent states of the remanent-state subassembly by applying an electric field between the first electrode and the second electrode by modulating the electrical resistance of the two-dimensional electron gas

Methodology Applied

Scientific EffectElectrical resistance modulation: Electrical Resistance

Data Source

PatentUS20240349625A1Electronic system with non-volatile writing by electrical control and with reading by hall effect

Publication Date: 2024.10.17 THALES SA

AI summary

An electronic system includes an electronic device having a stack of layers, the stack including a first electrode, a subassembly with electrically controllable remanent states, a two-dimensional electron gas, a magnetic subassembly comprising at least one magnetic layer, and a second electrode having two first contacts and a second contact. The system also includes a writing device writing remanent states by applying an electric field between the two electrodes, and a Hall-effect reading device reading the remanent state by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.