Hall-Effect Sensor with Parallel Biased Epitaxial Elements
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Solution Overview
Problem
Existing Hall-effect magnetic sensors face limitations in maximizing magnetic responsivity due to geometrical irregularities and processing tolerances, which restrict the reduction of Hall offset and improvement of the Hall voltage-to-offset ratio.
Innovation Solution
A Hall-effect magnetic sensor is designed with a p-type and n-type epitaxial Hall element arrangement, where the p-type element is implanted on top of the n-type element, creating a nearly zero-bias depletion layer for isolation, and electrical contacts are diffused to partially obstruct current flow, enhancing magnetic responsivity through parallel biasing and optimized topology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If contact area is minimized to maximize Hall voltage, then magnetic responsivity improves, but manufacturing precision requirements increase due to placement accuracy constraints
Solution Approach 1:
The asymmetric contact positioning strategy allows for relaxed manufacturing tolerances. By designing contacts with specific asymmetric positions rather than symmetric small contacts, the system achieves high Hall voltage while being more tolerant to variations in contact placement during manufacturing.
Solution Approach 2:
The patent applies local quality by creating high-conductivity diffused regions with specific properties at contact locations. These localized regions with optimized conductivity and geometry provide robust electrical connections that are less sensitive to placement variations, thereby reducing manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in improved magnetic responsivity and higher Hall sensor performance by optimizing the output voltage and reducing Hall offset, thereby enhancing the sensor's ability to accurately measure magnetic fields.
Implementation Method 1
Hall-effect magnetic sensors can convert energy stored in the magnetic field to an electrical signal by means of the Hall-effect in order to sense position of a moveable object
Implementation Method 2
When the magnetic field is applied normal to the plane, approximated as the thin sheet of electrical current flow through the Hall element, an electric field responds to counteract deflection of charge carriers due to the Lorentz force
Data Source
AI summary
A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.