Hall Element Parasitic Capacitance Reduction via Planar Electrode Layout
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Solution Overview
Problem
Hall elements experience fluctuations in output voltage due to parasitic capacitance and leakage current generated by the stacked structure of electrode pads, insulating films, and magnetosensitive portions, leading to unstable performance.
Innovation Solution
A hall element design featuring a substrate with a magnetosensitive portion, an insulating film, and four conductive portions that extend towards each other, with contact portions connecting the electrode and magnetosensitive portions through the insulating film, where specific ratios and distances between these components are optimized to minimize parasitic capacitance and leakage current, ensuring the entire region surrounded by the contact portions is within the magnetosensitive area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a stacked structure of electrode pad, insulating film, and magnetosensitive portion is formed, then electrical connection is achieved, but parasitic capacitance is generated causing output voltage fluctuation
Solution Approach 1:
The patent transitions from a vertical stacked structure to a planar layout where conductive portions extend in directions toward each other on the insulating film surface. This dimensional change reduces parasitic capacitance by minimizing vertical overlap between electrode and magnetosensitive portions while maintaining electrical connection through optimized contact portion placement.
Solution Approach 2:
The patent optimizes geometric parameters including the extension length of conductive portions, distance between contact portions (controlled by ratio r1 ≤ 75%), and distance between adjacent contact portions (controlled by ratio r2 ≤ 75%). These parameter changes reduce parasitic capacitance and prevent dielectric breakdown while maintaining effective electrical connection.
2Reliability
If the area of the stacked structure increases, then connection is improved, but potential difference across the insulating film increases causing leakage current
Solution Approach 1:
The patent controls the area and shape of conductive portions and contact portions to optimize the potential difference distribution across the insulating film. By limiting the extension length and optimizing the spatial arrangement with specific ratio constraints, the patent prevents excessive potential difference that would cause dielectric breakdown and leakage current while ensuring sufficient connection area.
Solution Approach 2:
The patent creates different functional zones: contact portions with high conductivity for electrical connection, insulating film regions with optimized thickness for potential difference management, and conductive portion extensions with controlled geometry. This local quality differentiation optimizes both connection quality and leakage current prevention in different spatial regions.
Data Source
AI summary
A hall element is provided to suppress variations in a hall output voltage of the hall element due to a stacked structure of an electrode portion, an insulating film, and a magnetosensitive portion. The hall element may include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, electrode portions formed on the insulating film, and contact portions electrically connecting the electrode portions and the magnetosensitive portion to each other through the insulating film, in which the entire region surrounded by the contact portions is included in the region of the magnetosensitive portion, and the proportion of regions extending with the corresponding contact portions of the electrode portions as reference points is set to be equal to or less than a predetermined value in a quadrangle formed by the region surrounded by the contact portions.