Hall Sensor With Dual Magnetic Flux Concentrators
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Solution Overview
Problem
Existing Hall sensors lack sufficient sensitivity for detecting magnetic fields due to limitations in concentrating magnetic flux, which affects their performance in applications such as proximity sensing and current sensing.
Innovation Solution
The integration of first and second magnetic flux concentrators over a semiconductor die with a Hall sensor, where the Hall sensor is laterally positioned between the concentrators, allows for increased magnetic flux concentration, enhancing the sensor's sensitivity by amplifying the magnetic field three times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional Hall sensor structure is used, then device simplicity is maintained, but magnetic field detection sensitivity is insufficient
Solution Approach 1:
Magnetic flux concentrators are introduced as intermediary elements between the external magnetic field and the Hall sensor. These concentrators, made of high permeability material, act as mediators that guide and concentrate magnetic flux lines toward the sensor active area, thereby enhancing detection sensitivity without requiring changes to the fundamental Hall sensor structure
Solution Approach 2:
The magnetic permeability parameter is strategically utilized by selecting materials with high magnetic permeability for the flux concentrators. This parameter change enables the concentrators to effectively attract and concentrate magnetic flux, amplifying the magnetic field strength at the sensor location by a factor of three or more while maintaining device simplicity
2Measurement precision
If magnetic flux concentrators are added to enhance sensitivity, then detection accuracy improves, but manufacturing complexity increases
Solution Approach 1:
The magnetic flux concentrators are positioned in the vertical dimension above the Hall sensor plane, rather than requiring lateral expansion or complex three-dimensional integration. This vertical stacking approach allows sensitivity enhancement while maintaining a compact footprint and simplifying the manufacturing process through sequential layer deposition
3Measurement precision
If larger magnetic field concentration is achieved, then sensor sensitivity increases, but device area may expand
Solution Approach 1:
By transitioning the flux concentration mechanism to the vertical dimension with concentrators positioned above the sensor plane, the design achieves high magnetic field concentration (three times or more) without requiring proportional increases in lateral device area, thus maintaining a compact footprint while enhancing sensitivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases the sensitivity of the Hall sensor by concentrating a larger magnetic field, effectively improving its ability to detect magnetic fields with higher accuracy.
Implementation Method 1
The first magnetic flux concentrator and the second magnetic flux concentrator are configured to concentrate a magnetic field through the Hall sensor
Implementation Method 2
The semiconductor substrate includes a Hall sensor in a semiconductor material
Data Source
AI summary
The present disclosure generally relates to magnetic field sensors with magnetic flux concentrators, and more particularly, to Hall sensors (which may be vertical or in-plane field Hall sensors) with magnetic flux concentrators. In an example, a sensor device includes a semiconductor die, a first magnetic flux concentrator, and a second magnetic flux concentrator. The semiconductor die includes a semiconductor substrate and an interconnect structure. The semiconductor substrate includes a Hall sensor in a semiconductor material. The interconnect structure is over the semiconductor substrate. The first magnetic flux concentrator is over the semiconductor die. The second magnetic flux concentrator is over the semiconductor die. At least part of the Hall sensor is laterally between the first magnetic flux concentrator and the second magnetic flux concentrator.