3D Magnetic Flux Concentrator Layout for Compact Hall Sensors
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Solution Overview
Problem
Existing magnetic sensor devices face challenges in achieving improved accuracy and reduced size without increasing the size of the semiconductor substrate, while maintaining signal-to-noise ratio and power consumption, while maintaining signal-to-noise ratio and power consumption.
Innovation Solution
The integrated sensor device incorporates a first magnetic flux concentrator aligned with a horizontal Hall element, with specific geometric dimensions to enhance magnetic field measurement accuracy and reduce size, using a semiconductor substrate with a first integrated magnetic flux concentrator aligned with the horizontal Hall element, having a height of at least 30 µm and a height-to-diameter ratio of at least 25%, to improve signal-to-noise ratio and reduce size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of the semiconductor substrate is reduced, then the device becomes more compact, but the measurement accuracy and signal-to-noise ratio deteriorate
Solution Approach 1:
The patent introduces a vertical dimension by placing a magnetic flux concentrator above the Hall element, forming a three-dimensional structure. This allows the device to maintain a compact footprint on the substrate while achieving enhanced magnetic field concentration through the vertical height of the concentrator (at least 30 µm), thereby improving measurement accuracy without increasing substrate area.
Solution Approach 2:
The patent changes the geometric parameters of the magnetic flux concentrator, specifically requiring a height of at least 30 µm and a height-to-diameter ratio of at least 25%. These parameter changes optimize the magnetic field concentration effect, enabling improved signal-to-noise ratio and measurement accuracy within a compact device footprint.
2Measurement precision
If a magnetic flux concentrator is added to improve signal-to-noise ratio, then measurement accuracy improves, but device complexity increases
Solution Approach 1:
The patent merges the magnetic flux concentrator with the Hall element structure, positioning it directly above the Hall element in an integrated configuration. This combining approach improves the signal-to-noise ratio through enhanced magnetic field concentration while minimizing the increase in device complexity by integrating rather than adding separate components.
3Measurement precision
If the height of the magnetic flux concentrator is increased to improve magnetic field concentration, then signal-to-noise ratio improves, but manufacturing difficulty increases
Solution Approach 1:
The patent specifies optimized parameter ranges for the magnetic flux concentrator, including a height of at least 30 µm and a height-to-diameter ratio of at least 25%. These parameter changes achieve effective magnetic field concentration while remaining compatible with standard semiconductor manufacturing processes, thereby balancing performance improvement with manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated sensor device achieves improved accuracy and reduced size by enhancing the signal-to-noise ratio and reducing power consumption, while maintaining a compact form factor.
Implementation Method 1
a first integrated magnetic flux concentrator (iMFC) located above said first horizontal Hall element; wherein the iMFC has a shape with a geometric centre which is aligned with a geometric centre of the horizontal Hall element
Implementation Method 2
a first horizontal Hall element... configured for providing a signal indicative of a magnetic field component oriented perpendicular to the semiconductor substrate
Data Source
Figure 1(a)~1(c)
Figure 2(a)~2(c)
Figure 3
AI summary
An integrated sensor device (920; 970; 1070) comprising: a semiconductor substrate comprising a horizontal Hall element (Hc), and an integrated magnetic flux concentrator (911; 1011) located substantially above said horizontal Hall element (Hc), wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element; and wherein the shape has a height (H) and a transversal dimension (D), wherein H ≥ 30 µm and/or wherein using the largest transversal dimension (H/D) ≥ 0.25 (25%). The integrated magnetic flux concentrator may be partially incorporated in the "interconnection stack" (1223; 1323). A method of producing such an integrated sensor device.