Hall Sensor Offset Voltage Reduction via Rounded Sensing Corners
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Solution Overview
Problem
Conventional hall sensors face challenges in maintaining uniformity of hall voltage due to high offset voltage caused by the cross-shaped sensing region, which results in inaccurate magnetic field detection.
Innovation Solution
A semiconductor-based hall sensor with a sensing region having at least one angulated or rounded corner, and electrodes with higher dopant concentration, arranged to face the center of the sensing region, along with a P-type well under the doped region, to reduce offset voltage and improve hall voltage uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a cross-shaped sensing region is used, then the structure is simple and easy to manufacture, but the offset voltage increases due to electromagnetic field concentration at corners
Solution Approach 1:
The patent applies curvature by replacing the sharp corners of the cross-shaped sensing region with rounded corners. This modification reduces the concentration of electromagnetic fields at the corners, thereby decreasing offset voltage and improving measurement precision while maintaining the overall cross-shaped structure for ease of manufacture
Solution Approach 2:
The patent applies local quality by selectively modifying only the corner regions of the sensing structure while maintaining the cross-shaped geometry in the main body. This localized rounding approach addresses the offset voltage issue at corners without changing the overall manufacturing simplicity of the cross-shaped design
2Device complexity
If a cross-shaped sensing region is used, then the structure is simple, but the hall voltage uniformity deteriorates
Solution Approach 1:
The patent applies curvature by rounding the corners of the sensing region, which redistributes the electromagnetic field more uniformly across the sensing area. This reduces hotspots at corners and improves hall voltage uniformity while maintaining the simple cross-shaped overall structure
3Device complexity
If electrodes are formed on the cross-shaped sensing region, then the device structure is straightforward, but high offset voltage is generated at corners
Solution Approach 1:
The patent applies curvature by rounding the corners of the sensing region, which reduces electromagnetic field concentration and thereby decreases the offset voltage generated at corner regions while maintaining the straightforward device structure
Solution Approach 2:
The patent applies local quality by selectively modifying the corner regions with rounded geometry while keeping the main sensing region and electrode configuration simple and straightforward, addressing offset voltage locally without increasing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively decreases offset voltage and enhances the uniformity of hall voltage, leading to improved magnetic field detection accuracy.
Implementation Method 1
A hall sensor or a hall effect sensor is a device that detects direction and magnitude of a magnetic field by using the hall effect in which the magnetic field is applied to a conductor through which electrical current flows to generate voltage in a direction perpendicular to the electrical current and the magnetic field
Data Source
AI summary
There is provided a hall sensor. The hall sensor includes a hall element disposed on a semiconductor substrate. The hall element includes: a sensing region, a first electrode, a second electrode, a third electrode and a fourth electrode, and a doped region disposed on the sensing region, and the sensing region has at least one angulated corner or rounded corner.