Hall Sensor Circuit Mechanical Stress Measurement
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Solution Overview
Problem
Mechanical stresses induced by packaging materials on semiconductor substrates lead to unpredictable changes in electrical and electronic parameters of integrated circuit arrangements, such as Hall sensors, due to differences in thermal expansion coefficients, causing issues with parametric accuracy and stability.
Innovation Solution
A semiconductor circuit arrangement with a Hall sensor circuit that applies Hall supply currents at different angles during distinct clock phases to ascertain specific mechanical stress components, such as shear and normal stresses, by generating electrical voltage signals that are dependent on these stresses, allowing for their combination to determine stress components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the integrated circuit arrangement is mounted in a package with potting compound, then the integrated circuit arrangement is protected from environmental influences, but mechanical stress is exerted on the semiconductor material due to differential thermal expansion
Solution Approach 1:
The patent replaces direct mechanical stress measurement with electrical parameter measurement. By measuring changes in electrical parameters (resistance, Hall voltage) that result from mechanical stress, the system indirectly detects stress without requiring direct mechanical sensing components that would add complexity to the package structure.
Solution Approach 2:
The patent utilizes the piezoresistive effect and piezo-Hall effect to convert mechanical stress into measurable electrical parameter changes. The semiconductor material's electrical properties change in response to mechanical stress, allowing stress detection through electrical measurements rather than mechanical sensing.
2Measurement precision
If the Hall sensor circuit is used to measure mechanical stress, then stress components can be ascertained, but the measurement precision is affected by the mechanical stress itself
Solution Approach 1:
The patent implements a feedback mechanism where the Hall sensor circuit measures mechanical stress, and this stress information is used to compensate for stress-induced errors in the Hall sensor's electrical parameters. The system continuously monitors stress effects and adjusts measurements to compensate, creating a closed-loop system that maintains accuracy despite varying stress conditions.
Solution Approach 2:
The patent converts the harmful effect of mechanical stress on Hall sensor accuracy into a useful measurement signal. By using the piezo-Hall effect, the same mechanical stress that degrades sensor performance is transformed into a measurable electrical signal that can be used to compensate for the degradation, turning a problem into a solution.
3Adaptability or versatility
If additional components and integrated circuit arrangements are integrated on the semiconductor substrate, then functionality is enhanced, but the device complexity increases
Solution Approach 1:
The patent makes the Hall sensor circuit multi-functional by enabling it to perform both its primary function (magnetic field sensing) and a secondary function (mechanical stress measurement). The same Hall sensor circuit is used for dual purposes, eliminating the need for separate stress sensing components and reducing overall device complexity while enhancing functionality.
Solution Approach 2:
The patent combines the Hall sensor circuit with stress measurement functionality into a single integrated component. By merging magnetic field sensing and mechanical stress detection into one circuit, the system reduces the number of separate components needed and simplifies the overall device architecture while providing enhanced functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively compensates for mechanical stress effects on Hall sensors and other components, improving parametric accuracy and stability by accurately measuring and mitigating stress-induced changes.
Implementation Method 1
As a result of various piezo effects in the semiconductor material such as, for example, the piezo-resistive effect
Implementation Method 2
the piezo-Hall effect describes the dependency of the Hall constant of the semiconductor material on the mechanical stress state in the semiconductor material
Implementation Method 3
Device and method for ascertaining a mechanical stress component by means of a hall sensor circuit
Data Source
AI summary
The subject matter described herein relates to a semiconductor circuit arrangement with a semiconductor substrate with an integrated Hall sensor circuit. During a first clock phase PHspin1 a first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) can be generated in the Hall effect region that has a first dependency on a mechanical stress of the semiconductor substrate. During a second clock phase PHspin2 a second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2) can be generated in the Hall effect region that has a second dependency on a mechanical stress of the semiconductor substrate. The semiconductor circuit arrangement is designed to ascertain a specific mechanical stress component based on a combination of the first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) and of the second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2).