Halogen Acid Surface Treatment for 2D Channel Electrode Contacts

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Solution Overview

Problem

The contact resistance between two-dimensional materials and electrodes in semiconductor devices is high, affecting device performance and necessitating a method to reduce this resistance.

Innovation Solution

A surface treatment method using Hydrogen Chloride (HCl) or other halogen acids like HBr, HF, and HNO3 is applied to the exposed surface of a two-dimensional channel layer before forming the electrode, which reduces impurities and oxide groups, thereby lowering contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If no surface treatment is applied to the two-dimensional material channel layer, then the manufacturing process is simple, but the contact resistance between the electrode and the channel layer is high

Engineering Contradiction:

Improvecontact resistanceVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies surface treatment to the two-dimensional material channel layer before forming the electrode. This preliminary action modifies the surface properties of the channel layer, creating a more favorable interface for electrode contact and thereby reducing contact resistance before the electrode formation step occurs.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent changes the surface parameters of the two-dimensional material channel layer through chemical surface treatment. By applying treatments such as HCl, H2O2, or O2 plasma, the surface chemistry and morphology of the channel layer are modified, which directly affects the contact resistance at the electrode-channel layer interface.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If surface treatment is applied to reduce contact resistance, then the electrical characteristics improve, but the manufacturing process becomes more complex

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidmanufacturing ease

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs chemical surface treatment using substances like HCl, H2O2, or O2 plasma to modify the surface parameters of the two-dimensional material channel layer. This treatment alters the surface chemistry to reduce contact resistance and improve electrical characteristics, while the process is designed to be integrated into existing manufacturing workflows.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The surface treatment acts as an intermediary step between the channel layer formation and electrode deposition. By introducing this intermediate surface modification step, the patent creates an optimized interface that facilitates better electrical contact, thereby improving overall device performance despite the additional process step.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If surface treatment with HCl is applied, then contact resistance decreases and Fermi level pinning is alleviated, but the process requires precise concentration control

Engineering Contradiction:

Improvecontact resistanceVSAvoidconcentration control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent specifies using HCl at a concentration of 5% for surface treatment of the two-dimensional material channel layer. This precise parameter specification (5% concentration) is determined to be optimal for reducing contact resistance and alleviating Fermi level pinning while maintaining manufacturability and avoiding excessive complexity in process control.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The surface treatment significantly reduces contact resistance and alleviates Fermi level pinning, resulting in improved electrical characteristics and smoother surfaces, enhancing the performance of semiconductor devices.

Implementation Method 1

surface-treating the exposed surface with Hydrogen Chloride (HCl)

Methodology Applied

Scientific EffectChemical etching:

Implementation Method 2

surface-treating includes surface-treating the exposed surface with one of HBr, HF, HI, and HNO3

Methodology Applied

Scientific EffectChemical reaction:

Implementation Method 3

alleviates Fermi level pinning, resulting in improved electrical characteristics

Methodology Applied

Scientific EffectFermi level pinning:

Data Source

PatentUS20240006190A1Method of manufacturing semiconductor device using suffrage treatment process

Publication Date: 2024.01.04 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.