Halogen-Free Molybdenum Precursors for Low-Temperature Deposition
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Solution Overview
Problem
Conventional molybdenum-containing precursors with halogen ligands cause damage to existing layers on semiconductor substrates during deposition, necessitating additional protective measures and higher processing temperatures due to dimerization and trimerization issues.
Innovation Solution
The use of halogen-free molybdenum-containing precursors with aminoalcohol ligands mitigates substrate damage and reduces processing temperatures by preventing dimer and trimer formation, allowing for controlled deposition of molybdenum-containing materials without plasma enhancement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If halogen-containing ligands are used in molybdenum precursors, then deposition efficiency is improved, but damage to existing substrate layers occurs
Solution Approach 1:
The patent removes halogen-containing ligands from the molybdenum precursor complex, extracting the harmful component while retaining the beneficial deposition properties through alternative non-halogen ligand design
Solution Approach 2:
The patent introduces alternative ligand molecules as intermediaries that mediate between the molybdenum center and the substrate, providing controlled material transfer without the harmful chemical attack properties of halogen ligands
2Object-affected harmful factors
If halogen-free molybdenum precursors are used, then damage to substrate layers is prevented, but deposition efficiency may be reduced
Solution Approach 1:
The patent modifies the chemical parameters of the precursor ligands by replacing halogen-containing groups with alternative functional groups, changing the reaction characteristics to achieve both non-damaging properties and maintained deposition efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes substrate damage and enables lower processing temperatures, improving the integrity and consistency of semiconductor device layers while maintaining deposition quality.
Implementation Method 1
contacting the substrate with the molybdenum-containing precursor to deposit a molybdenum-containing material on the substrate
Implementation Method 2
providing a reactant to the processing region of the semiconductor processing chamber to react with the molybdenum-containing precursor to form the molybdenum-containing material
Implementation Method 3
forming plasma effluents of the reactant to react with the molybdenum-containing precursor to form the molybdenum-containing material
Implementation Method 4
forming plasma effluents of the reactant to react with the molybdenum-containing precursor to form the molybdenum-containing material
Implementation Method 5
annealing the molybdenum-containing material
Data Source
AI summary
Exemplary methods of semiconductor processing, such as methods of depositing a molybdenum-containing material on a substrate, may include providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber in which the substrate is located. The molybdenum-containing precursor may include a molybdenum complex according to Compound I:R may be methyl or ethyl, R′ may be methyl or ethyl, R″ may be methyl, ethyl, or propyl, and n may be equal to 1 or 2. Contacting the substrate with the molybdenum-containing precursor may deposit the molybdenum-containing material on the substrate.