Halogen Gas Etching for Faster, More Complete Film Removal
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Solution Overview
Problem
Existing methods using gases containing boron and halogen elements for film removal are inefficient, leading to low etching rates and incomplete film removal.
Innovation Solution
A method involving the sequential or simultaneous supply of first and second halogen element-containing gases to enhance film removal efficiency, utilizing a substrate processing apparatus with specific gas supply and exhaust systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a gas containing boron and a halogen element is used for film removal, then the etching process can be performed, but the etching rate is low and the film cannot be sufficiently removed
Solution Approach 1:
The patent combines two different halogen element-containing gases (first gas and second gas) into a single etching process. The first gas contains a halogen element (e.g., chlorine) and the second gas contains a different halogen element (e.g., fluorine), creating a composite gas environment that synergistically improves both etching rate and film removal completeness, resolving the contradiction between productivity and reliability.
Solution Approach 2:
The patent uses a composite gas system where two different halogen-containing gases work together. This composite approach creates a more effective etching chemistry than either gas alone, achieving high etching rates while ensuring complete film removal, thus simultaneously improving productivity and reliability.
2Productivity
If a single halogen element-containing gas is used for etching, then the process is simple, but the etching efficiency is insufficient
Solution Approach 1:
The patent segments the etching process by using two distinct gas supply systems that can independently control the flow of first and second halogen element-containing gases. This segmentation allows precise control over gas composition and flow rates, achieving high etching efficiency while maintaining manageable system complexity through modular design.
Solution Approach 2:
The patent implements a dynamic gas supply system where the flow rates and composition of the two halogen-containing gases can be adjusted during the etching process. This dynamic control enables optimization of etching efficiency at different stages, while the system maintains flexibility without excessive complexity through programmable gas flow control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively removes films by weakening chemical bonds, achieving efficient etching and preventing film accumulation, thereby reducing particle generation.
Implementation Method 1
The method involves the sequential or simultaneous supply of first and second halogen element-containing gases to enhance film removal efficiency, utilizing a substrate processing apparatus with specific gas supply and exhaust systems.
Implementation Method 2
A method involving the sequential or simultaneous supply of first and second halogen element-containing gases to enhance film removal efficiency
Data Source
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AI summary
The present invention provides technology with which it is possible to efficiently remove a film. The present invention comprises a step for supplying a first gas that contains a first halogen element and a second gas that contains a second halogen element to a film so as to remove at least a part of the film.