Halogen-Insulated Nonvolatile Storage for Stable Analog Reference Voltage

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Solution Overview

Problem

Conventional nonvolatile storage elements used in analog circuits face challenges in achieving high charge holding characteristics and flexibility in layout dimensions, making them unsuitable for applications requiring accurate reference voltage generation due to manufacturing variations.

Innovation Solution

A nonvolatile storage element with a charge holding region surrounded by an insulator containing halogen, such as fluorine, distributed in all directions, which improves charge holding characteristics and allows for flexible layout dimensions, and an analog circuit configuration using multiple nonvolatile storage elements connected in series to generate a stable reference voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional nonvolatile storage elements are used in analog circuits, then manufacturing variations cause threshold voltage and resistance value deviations, but achieving high charge holding characteristics and flexibility in layout dimensions is difficult

Engineering Contradiction:

Improvecharge holding characteristicsVSAvoidflexibility in layout dimensions

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent introduces halogen elements (such as fluorine) into the insulator surrounding the charge holding region, which changes the physical and chemical parameters of the insulator material. This parameter change improves charge holding characteristics by reducing charge leakage while maintaining flexibility in layout dimensions, resolving the contradiction between reliability and adaptability.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses composite insulator materials containing halogen elements distributed within the insulator structure. This composite material approach combines the charge isolation properties of the insulator with the charge trapping and reduced leakage properties of halogen elements, achieving both high charge holding characteristics and layout flexibility.

Inventive Principle:

Principle #40Composite materials

2Measurement precision

If reference voltage generation circuits are designed with conventional transistors, then manufacturing variations cause reference voltage to deviate from desired values, but adding spare transistors or laser trimmer increases layout area and manufacturing complexity

Engineering Contradiction:

Improvereference voltage accuracyVSAvoidlayout area and manufacturing steps

Core Design Contradiction:

Measurement precisionVSDevice complexity

Solution Approach 1:

The nonvolatile storage element with halogen-containing insulator provides self-adjusting charge holding characteristics that automatically compensate for manufacturing variations. The halogen elements create trap states that naturally regulate charge distribution, enabling the circuit to self-correct reference voltage deviations without requiring external adjustment mechanisms, thus improving precision while reducing complexity.

Inventive Principle:

Principle #25Self-service

Solution Approach 2:

By changing the insulator material parameters through halogen incorporation, the patent achieves better charge retention and more stable threshold voltages, which directly improves reference voltage accuracy without requiring additional adjustment components or increased layout area.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If conventional nonvolatile storage elements are used, then charge holding characteristics are insufficient for accurate analog circuit operation, but improving charge holding may reduce flexibility in layout design

Engineering Contradiction:

Improvecharge holding characteristicsVSAvoidease of layout design

Core Design Contradiction:

ReliabilityVSEase of operation

Solution Approach 1:

The patent applies halogen elements locally within the insulator structure surrounding the charge holding region. This local quality enhancement improves charge holding characteristics specifically where needed without affecting the overall device dimensions or layout flexibility, allowing designers to maintain ease of operation while achieving improved reliability.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves excellent charge holding characteristics and reduces variations in electric characteristics, enabling highly accurate analog circuits with low degradation and minimal influence from manufacturing variations.

Implementation Method 1

an insulator surrounding the entire surface of the charge holding region and having halogen distributed in at least one part of a region surrounding the entire surface

Methodology Applied

Scientific EffectHalogen distribution in insulator:

Data Source

PatentUS12034083B2Nonvolatile storage element and analog circuit provided with same

Publication Date: 2024.07.09 ASAHI KASEI MICRODEVICES CORP

AI summary

A nonvolatile storage element includes a substrate; a gate region having a charge holding region and an insulator surrounding an entire surface of the charge holding region; a drain region formed in one of both sides of a lower portion of the gate region; and a source region formed in another one of both the sides. A halogen is distributed in the insulator to cover an entire surface of an upper surface of the charge holding region.