Resist Underlayer Composition for Solvent-Resistant Rectangular Patterning
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in forming resist underlayer films that exhibit high solvent resistance and maintain pattern rectangularity, especially with the use of extreme ultraviolet rays, leading to issues like pattern trailing at the bottom of the resist film.
Innovation Solution
A composition comprising a polymer with specific repeating units and a solvent is used to form a resist underlayer film, which includes a polymer containing a monovalent group with an aromatic ring substituted by halogen atoms and specific functional groups, enhancing solvent resistance and pattern rectangularity through crosslinking structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional compositions are used to form resist underlayer films, then the manufacturing process is simple, but the solvent resistance and pattern rectangularity are insufficient
Solution Approach 1:
The patent uses a composite polymer structure containing specific repeating units with halogen-substituted aromatic rings and crosslinkable groups. This composite structure provides both high solvent resistance through the halogen-substituted aromatic units and pattern rectangularity through crosslinking, while resolving the contradiction between performance and composition complexity by designing a targeted molecular architecture rather than using complex mixture formulations
Solution Approach 2:
The patent modifies the chemical parameters of the polymer by incorporating specific repeating units with halogen atoms (Cl, Br, I) substituted on aromatic rings, and including crosslinkable functional groups. This parameter change in molecular structure directly enhances solvent resistance and enables crosslinking-induced pattern rectangularity, transforming the material properties without complicating the overall composition system
2Manufacturing precision
If conventional resist underlayer films are used, then the application process is straightforward, but pattern trailing occurs at the bottom of the resist film
Solution Approach 1:
The patent incorporates crosslinkable groups directly into the polymer structure of the resist underlayer film before the resist film is applied and exposed. This preliminary inclusion of crosslinking capability allows the underlayer to maintain pattern rectangularity during subsequent processing steps, preventing pattern trailing at the bottom of the resist film without requiring additional process steps
Solution Approach 2:
The halogen-substituted aromatic repeating units act as an intermediary mechanism that mediates between the solvent environment and the polymer matrix. These units provide steric bulk and intermolecular interactions that prevent solvent penetration and swelling, thereby maintaining pattern rectangularity and preventing trailing during the development process
3Stability of the object's composition
If high solvent resistance is achieved through crosslinking structures, then pattern rectangularity improves, but the composition becomes more complex
Solution Approach 1:
The patent introduces specific repeating units with halogen-substituted aromatic rings and crosslinkable groups at localized positions within the polymer chain. This local quality approach concentrates the functional properties (solvent resistance and crosslinking capability) in specific molecular segments rather than requiring complex overall composition, achieving high stability without excessive structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a resist underlayer film that is highly solvent-resistant and maintains pattern rectangularity, facilitating efficient production of semiconductor substrates with improved pattern fidelity.
Implementation Method 1
enhancing solvent resistance and pattern rectangularity through crosslinking structures
Data Source
AI summary
A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. R1 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L1 is a single bond or a divalent linking group; and Ar1 is a monovalent group comprising an aromatic ring having 6 to 20 ring members, a hydrogen atom of the aromatic ring is substituted with at least one halogen atom, and the monovalent group represented by Ar1 further comprises et least one group selected from the group consisting of a group represented by formulae (2-1) to (2-8).


