Halogen Reducer for High-Purity Reduced Graphene Oxide
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Solution Overview
Problem
Conventional methods for producing reduced graphene oxide suffer from limitations such as high impurity content, particularly nitrogen, which affects electrical conductivity and purity, and are not suitable for large-scale, low-temperature mass production.
Innovation Solution
A graphene oxide reducer containing a halogen element, preferably hydroiodic acid (HI), is used to react with graphene oxide at a temperature of 10°C or more, optionally with a weaker acid like acetic acid, to produce high-purity reduced graphene oxide with improved electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional reducers (hydrazine hydrate, sodium borohydride) are used to produce reduced graphene oxide, then the reduction process can be performed, but high impurity content (particularly nitrogen) is introduced which deteriorates electrical conductivity and purity
Solution Approach 1:
The patent changes the chemical composition parameter of the reducer from conventional options (hydrazine hydrate, sodium borohydride) to hydroiodic acid (HI). This parameter change eliminates nitrogen-containing impurities while maintaining effective reduction capability, thereby improving electrical conductivity without compromising purity
Solution Approach 2:
The patent employs hydroiodic acid as a disposable reducing agent that can be easily removed after the reduction process. The HI reducer leaves no persistent harmful residues compared to conventional reducers, allowing for cleaner final products with superior electrical properties
2Productivity
If conventional reduction methods are used, then reduced graphene oxide can be produced, but the process requires high temperature and is not suitable for large-scale mass production
Solution Approach 1:
The patent changes the temperature parameter of the reduction process from conventional high-temperature requirements to low-temperature operation (10°C or higher). Hydroiodic acid enables effective reduction at these lower temperatures, making the process suitable for large-scale mass production while maintaining product quality
Solution Approach 2:
The hydroiodic acid reducer operates efficiently under mild conditions without requiring additional heating equipment or high-energy input. The reaction proceeds effectively at low temperatures, simplifying the production process and enabling scalable manufacturing
3Manufacturing precision
If hydrazine hydrate is used as reducer, then reduced graphene oxide with highest purity can be obtained, but nitrogen element remains as impurity that cannot be easily removed
Solution Approach 1:
The patent changes the chemical identity of the reducer from nitrogen-containing hydrazine hydrate to nitrogen-free hydroiodic acid. This fundamental parameter change eliminates the source of nitrogen impurities while maintaining high purity reduction, achieving both purity and absence of harmful nitrogen elements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high-purity reduced graphene oxide with low impurity content, excellent electrical conductivity, and enables large-scale, low-temperature production, suitable for applications in materials like plastic solar cells, super capacitors, and biosensors.
Implementation Method 1
graphene oxide reducer containing a reducer including a halogen element, and a method for producing reduced graphene oxide by reacting graphene oxide with a reducer including a halogen element
Data Source
AI summary
The present invention relates to a novel graphene oxide reducing agent and a method for manufacturing a reduced graphene oxide from graphene oxide using same. More particularly, in the present invention, the reduced graphene oxide is manufactured by reducing a graphene oxide using a reducing agent containing a halogen element, and is applicable as an electric conductor, a semiconductor, and an insulator in various fields.