Halogen-Containing Precursor for Silicon Dioxide Film NBTI Stability
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Solution Overview
Problem
The rapid down-scaling of semiconductor devices necessitates improved transistor performance and reliability, particularly in preventing Negative Bias Temperature Instability (NBTI) characteristics deterioration due to stress applied to the channel region, where Si—H bonds break, leading to dangling bonds and threshold voltage shifts.
Innovation Solution
A precursor composition for forming a silicon dioxide film using compounds like Si(NMe2)3Cl, Si(NEt2)3Cl, and Si(NMe2)2Cl2, which incorporate halogen atoms that bond with silicon atoms, creating stable Si-A bonds with higher binding energy, preventing bond breakage under stress and reducing NBTI deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon dioxide deposition is used, then the deposition process is simple, but the Si-H bonds break under stress leading to dangling bonds and NBTI deterioration
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor by incorporating halogen atoms (Cl, F, Br, I) into the silicon precursor structure. This parameter change transforms the bonding characteristics at the silicon-dioxide interface, replacing vulnerable Si-H bonds with more stable Si-X (halogen) bonds that resist breaking under stress, thereby improving NBTI reliability without complicating the overall deposition process
Solution Approach 2:
The patent uses composite precursor molecules that combine silicon centers with halogen substituents (e.g., SiCl4, SiF4, or mixed ligand compounds). These composite precursors deliver both the silicon needed for dioxide formation and the halogen atoms that stabilize the interface, achieving dual functionality in a single material that improves reliability without adding process complexity
2Speed
If stress is applied to the channel region to improve transistor performance, then transistor speed increases, but Si-H bonds break causing threshold voltage shifts
Solution Approach 1:
The patent applies beforehand cushioning by pre-installing halogen atoms at the silicon-dioxide interface through the precursor composition. These halogen atoms act as protective buffers that absorb and distribute stress energy, preventing the bond breakage that would otherwise occur under high electric field stress during transistor operation, thus maintaining interface stability while enabling high-speed performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of halogen-containing precursor compositions for silicon dioxide film deposition stabilizes the silicon dioxide film interface, maintaining bond integrity under stress and reducing NBTI characteristics deterioration, thereby enhancing transistor reliability and performance.
Implementation Method 1
forming a silicon dioxide film on a substrate, the silicon dioxide film being formed by reacting the precursor composition with an oxygen-containing reaction gas
Implementation Method 2
incorporate halogen atoms that bond with silicon atoms, creating stable Si-A bonds with higher binding energy
Data Source
AI summary
A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):HxSiAy(NR1R2)4-x-y (1)HxSi(NAR3)4-x (2)HxSi(R4)z(R5)4-x-z (3)wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.