Halogenated Indium Precursors for High-Throughput Vapor Deposition
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Solution Overview
Problem
The synthesis of indium-containing alloys and films is limited by slow growth processes and the challenge of integrating group III-V semiconductors with silicon, hindering high-throughput production and device integration in the semiconductor industry.
Innovation Solution
Development of indium(III)-containing precursors with specific halogen-based ligands for vapor phase depositions, such as ALD and CVD, using formulas like [(R1)NC(R3)N(R2)]InX2, [(R1)NC(R3)N(R2)]2InX, or [((R1)NC(R3)N(R2))InX]2(μ-X)2, where X is chlorine, bromine, or iodine, and R1, R2, R3 are various alkyl or aryl groups, enabling deposition on substrates with co-reactants to form films like InGaAs, InOx, and InSnO.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If molecular beam epitaxy or metalorganic chemical vapor deposition is used for synthesis, then indium-containing alloys and films can be produced, but the growth process is slow and requires enormous amounts of material with challenging engineering
Solution Approach 1:
The patent changes the chemical parameters of the precursor molecules by introducing novel indium(III) complexes with specific ligand structures (amidinate, amino alkane, guanidinate groups). These parameter changes in molecular structure enable higher volatility and reactivity, allowing deposition at lower temperatures and reduced material consumption while maintaining high throughput production capability
Solution Approach 2:
The invention uses composite precursor molecules combining indium(III) centers with organic ligand frameworks (amidinate, amino alkane, guanidinate groups). These composite molecular structures provide both the necessary indium source and the functional groups for controlled decomposition and film formation, eliminating the need for separate material delivery systems and reducing overall material requirements
2Adaptability or versatility
If group III-V semiconductors are combined with silicon, then high-performance devices can be developed, but the integration is extremely challenging
Solution Approach 1:
The patent employs silicon-compatible deposition conditions and precursor designs that serve as intermediaries between group III-V semiconductor requirements and silicon substrate constraints. The novel indium precursors can be deposited under conditions compatible with silicon processing, enabling seamless integration without requiring complex intermediate fabrication steps or specialized equipment
Solution Approach 2:
The invention adjusts deposition parameters (temperature, pressure, precursor flow rates) and precursor molecular parameters to achieve compatibility between group III-V material synthesis and silicon substrate processing. This parameter optimization enables direct integration of indium-containing films on silicon without requiring complex intermediate processing steps
3Manufacturing precision
If existing indium precursors are used for vapor phase deposition, then indium-containing films can be deposited, but the deposition is not uniform and throughput is limited
Solution Approach 1:
The patent optimizes precursor molecular parameters (ligand structure, molecular weight, volatility) to achieve ideal decomposition characteristics during vapor phase deposition. The novel indium(III) complexes with amidinate, amino alkane, and guanidinate ligands provide controlled decomposition rates that ensure uniform film formation across the substrate while maintaining high deposition speeds for improved throughput
Solution Approach 2:
The invention introduces dynamic control capabilities through precursor design, where the ligand structures are engineered to decompose at specific temperature ranges and reaction rates. This dynamic behavior ensures uniform material distribution and film formation during the deposition process, while the high volatility of the precursors enables rapid deposition for improved productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates high-throughput and uniform deposition of indium-containing films, overcoming the limitations of existing methods and enabling integration with silicon-based devices.
Implementation Method 1
exposing the substrate to a vapor of a film forming composition that contains an indium(III)-containing precursor, and depositing at least part of the indium(III)-containing precursor onto the substrate to form the indium-containing film on the substrate through a vapor deposition process
Implementation Method 2
combining the indium(III)-containing precursor with a co-reactant, and chemically reacting the indium(III)-containing precursor with the co-reactant to form the indium-containing film
Data Source
AI summary
Disclosed are indium (In)-containing film forming compositions comprising In(III)-containing precursors that contain halogens, methods of synthesizing them and methods of using them to deposit the indium-containing films and/or indium-containing alloy film. The disclosed In(III)-containing precursors contain chlorine with nitrogen based ligands. In particular, the disclosed In(III)-containing precursors contains 1 or 2 amidinate ligands, 1 or 2 iminopyrrolidinate ligands, 1 or 2 amido amino alkane ligands, 1 or 2 μ-diketiminate ligands or a silyl amine ligand. The disclosed In(III)-containing precursors are suitable for vapor phase depositions (e.g., ALD, CVD) of the indium-containing films and/or indium-containing alloy films.